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Lloyd Alfred Relyea

age ~92

from Webster, NY

Also known as:
  • Lloyd A Relyea
  • Lloyd A Belyea
Phone and address:
1363 Shoecraft Rd, Webster, NY 14580
(585)6712978

Lloyd Relyea Phones & Addresses

  • 1363 Shoecraft Rd, Webster, NY 14580 • (585)6712978
  • 1365 Shoecraft Rd, Webster, NY 14580
  • Scranton, PA
  • Syracuse, NY
  • Auburn, NY
  • Camillus, NY

Us Patents

  • Apparatus And Process For Glow Discharge Comprising Substrate Temperature Control By Shutter Adjustment

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  • US Patent:
    52642569, Nov 23, 1993
  • Filed:
    Sep 8, 1992
  • Appl. No.:
    7/941463
  • Inventors:
    John J. Wozniak - Webster NY
    Barry A. Lees - Fairport NY
    John A. Appoloney - Rochester NY
    Lloyd A. Relyea - Webster NY
    L. John Potter - Marion NY
    Frederick L. Kuhn - Macedon NY
    Edwin R. Kuhn - Rochester NY
  • Assignee:
    Xerox Corporation - Stamford CT
  • International Classification:
    C23C 1402
    C23C 1424
    C23C 1650
  • US Classification:
    427535
  • Abstract:
    Disclosed is a method and apparatus for effecting glow discharge comprising an elongated electrically conductive glow bar electrode, means for applying a potential to the glow bar electrode, thereby generating ions, means for creating a flow of ions from the glow bar electrode to a second electrode, and a shield situated to block partially the flow of ions between the glow bar electrode and the second electrode, said shield having a plurality of apertures through which ions can flow between the glow bar electrode and the second electrode, each aperture having associated therewith at least one shutter, said shutters being capable of at least partially blocking the flow of ions through the apertures, each shutter individually movable to a plurality of positions to adjust the flow of ions through the apertures.
  • Method To Maintain The Levelness Of A Heated Crucible

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  • US Patent:
    55823939, Dec 10, 1996
  • Filed:
    Apr 21, 1995
  • Appl. No.:
    8/426506
  • Inventors:
    L. John Potter - Ontario NY
    John A. Appoloney - Rochester NY
    Barry A. Lees - Fairport NY
    Frederick L. Kuhn - Macedon NY
    Lloyd A. Relyea - Webster NY
    John Wozniak - Webster NY
  • Assignee:
    Xerox Corporation - Stamford CT
  • International Classification:
    C21B 300
  • US Classification:
    266 44
  • Abstract:
    There is disclosed a method for maintaining the levelness of a crucible having a first end and a second end during thermal expansion of the crucible comprising: providing a continuous pulling force on the first end in a direction parallel to the length of the crucible during heating of the crucible.
  • Trapping Layer Overcoated Inorganic Photoresponsive Device

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  • US Patent:
    42860334, Aug 25, 1981
  • Filed:
    Mar 5, 1980
  • Appl. No.:
    6/127177
  • Inventors:
    James H. Neyhart - Penfield NY
    George A. Brown - Penfield NY
    Lloyd A. Relyea - Webster NY
    Merlin E. Scharfe - Penfield NY
    Heinz W. Pinsler - Penfield NY
  • Assignee:
    Xerox Corporation - Stamford CT
  • International Classification:
    G03G 5082
    G03G 514
  • US Classification:
    430 58
  • Abstract:
    This invention is generally directed to inorganic overcoated photo-responsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99. 5 percent to about 99. 9 percent, the percentage by weight of arsenic present is from about 0. 1 percent to about 0. 5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; a hole trapping layer overcoated on the generator layer, the trapping layer being comprised of a halogen doped selenium arsenic alloy, containing from about 95 percent selenium, to 99. 9 percent selenium, from about 0. 1 percent to about 5 percent of arsenic and 10 parts per million to 200 parts per million of a halogen material, and a layer of insulating organic resin overlaying the charge generating layer.
  • Method Of Imaging A Trapping Layer Overcoated Inorganic Photoresponsive Device

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  • US Patent:
    43306098, May 18, 1982
  • Filed:
    May 11, 1981
  • Appl. No.:
    6/262094
  • Inventors:
    James H. Neyhart - Penfield NY
    George A. Brown - Penfield NY
    Lloyd A. Relyea - Webster NY
    Merlin E. Scharfe - Penfield NY
    Heinz W. Pinsler - Penfield NY
  • Assignee:
    Xerox Corporation - Stamford CT
  • International Classification:
    G03G 1322
    G03G 1316
  • US Classification:
    430126
  • Abstract:
    This invention is generally directed to inorganic overcoated photo-responsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99. 5 percent to about 99. 9 percent, the percentage by weight of arsenic present is from about 0. 1 percent to about 0. 5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; a hole trapping layer overcoated on the generator layer, the trapping layer being comprised of a halogen doped selenium arsenic alloy, containing from about 95 percent selenium, to 99. 9 percent selenium, from about 0. 1 percent to about 5 percent of arsenic and 10 parts per million to 200 parts per million of a halogen material, and a layer of insulating organic resin overlaying the charge generating layer.
  • Overcoated Inorganic Layered Photoresponsive Device And Process Of Preparation

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  • US Patent:
    42872790, Sep 1, 1981
  • Filed:
    Mar 5, 1980
  • Appl. No.:
    6/127176
  • Inventors:
    George A. Brown - Penfield NY
    Lloyd A. Relyea - Webster NY
    Merlin E. Scharfe - Penfield NY
    Heinz W. Pinsler - Penfield NY
  • Assignee:
    Xerox Corporation - Stamford CT
  • International Classification:
    G03G 5082
    G03G 514
  • US Classification:
    430 58
  • Abstract:
    This invention is generally directed to inorganic overcoated photoresponsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99. 5 percent to about 99. 9 percent, the percentage by weight of arsenic present is from about 0. 1 percent to about 0. 5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; and a layer of insulating organic resin overlaying the charge generating layer. This device is useful in an electrophotographic imaging system using in a preferred embodiment a double charging sequence, that is, negative charging, followed by positive charging.
  • Overcoated Inorganic Layered Photoresponsive Device And Process Of Use

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  • US Patent:
    43189733, Mar 9, 1982
  • Filed:
    Mar 2, 1981
  • Appl. No.:
    6/239239
  • Inventors:
    George A. Brown - Penfield NY
    Lloyd A. Relyea - Webster NY
    Merlin E. Scharfe - Penfield NY
    Heinz W. Pinsler - Penfield NY
  • Assignee:
    Xerox Corporation - Stamford CT
  • International Classification:
    G03G 1322
  • US Classification:
    430 31
  • Abstract:
    This invention is generally directed to inorganic overcoated photoresponsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99. 5 percent to about 99. 9 percent, the percentage by weight of arsenic present is from about 0. 1 percent to about 0. 5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; and a layer of insulating organic resin overlaying the charge generating layer. This device is useful in an electrophotographic imaging system using in a preferred embodiment a double charging sequence, that is, negative charging, followed by positive charging.

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