Abstract:
This invention is generally directed to inorganic overcoated photo-responsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99. 5 percent to about 99. 9 percent, the percentage by weight of arsenic present is from about 0. 1 percent to about 0. 5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; a hole trapping layer overcoated on the generator layer, the trapping layer being comprised of a halogen doped selenium arsenic alloy, containing from about 95 percent selenium, to 99. 9 percent selenium, from about 0. 1 percent to about 5 percent of arsenic and 10 parts per million to 200 parts per million of a halogen material, and a layer of insulating organic resin overlaying the charge generating layer.