Luis Javier Fernandez

US Patent:

20220277924, Sep 1, 2022

Filed:

May 17, 2022

Appl. No.:

17/663811

Inventors:

- Chaska MN, US
Hiromitsu Kambara - Miyagi, JP
Masaru Nishino - Hillsboro OR, US
Reo Kosaka - Miyagi, JP
Matthew Gwinn - Billerica MA, US
Luis Fernandez - Billerica MA, US
Kenichi Oyama - Yamanashi, JP
Sakurako Natori - Yamanashi, JP
Noriaki Okabe - Tokyo, JP

International Classification:

H01J 37/20
H01J 37/317
C23C 14/46
C23C 14/50
H01L 21/68

Abstract:

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

US Patent:

20210376123, Dec 2, 2021

Filed:

May 25, 2021

Appl. No.:

17/329178

Inventors:

- Tokyo, JP
Atsushi TSUBOI - Tokyo, JP
Atsushi ENDO - Yamanashi, JP
Masanobu IGETA - Tokyo, JP
Masaru SUGIMOTO - Hillsboro OR, US
Luis FERNANDEZ - Billerica MA, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 29/66
H01L 29/06
H01L 29/423
H01L 29/786
H01L 21/02

Abstract:

A method including depositing a dielectric film on a substrate including stacked structures with recessed portions formed on side surfaces of each of the stacked structures, wherein the dielectric film is deposited so that the stacked structures are covered at a thickness which is equal to or less than half a width of the recessed portions; filling a trench or trenches that are located between the stacked structures with a sacrificial film; etching the sacrificial film along the stacked structures; etching the dielectric film so that the dielectric film is etched more than the sacrificial film; removing the sacrificial film; after the removing of the sacrificial film, depositing a dielectric film to a thickness equal to or less than half the width of the recessed portions; and etching the deposited dielectric film, on a condition that the deposited dielectric film remains in the recessed portions.

US Patent:

20210335568, Oct 28, 2021

Filed:

Sep 11, 2020

Appl. No.:

17/018741

Inventors:

- Tokyo, JP
Hiromitsu Kambara - Miyagi, JP
Masaru Nishino - Miyagi, JP
Reo Kosaka - Hillsboro OR, US
Matthew Gwinn - Winchendon MA, US
Luis Fernandez - Billerica MA, US
Kenichi Oyama - Yamanashi, JP
Sakurako Natori - Yamanashi, JP
Noriaki Okabe - Tokyo, JP

International Classification:

H01J 37/20
H01J 37/317

Abstract:

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.