Luis G Fernandez

US Patent:

60356596, Mar 14, 2000

Filed:

Sep 18, 1998

Appl. No.:

9/157027

Inventors:

Luis Fernandez - Hialeah FL

International Classification:

F25D 308

US Classification:

624574

Abstract:

A sanitary beverage cooler. This invention provides for a sanitary beverage cooler which is affixed to the open top of a beverage-holding container such as a can or bottle. The sanitary beverage cooler is filled with a cooling substance such as a plurality of ice cubes. As the beverage passes through the opening in the beverage-holding container, either by tilting or by use of a straw, and into the orifice defined by the cylindrical receptacle of the beverage cooler, the beverage becomes cooled by the cooling substance which is contained within the beverage cooler. The user is thereby able to affix the beverage cooler to a beverage-holding container containing a warm beverage, and drink the beverage contained therein after it has been cooled by cooling substance without the possibility of the beverage being diluted by continuous and prolonged contact with the cooling substance.

US Patent:

20220277924, Sep 1, 2022

Filed:

May 17, 2022

Appl. No.:

17/663811

Inventors:

- Chaska MN, US
Hiromitsu Kambara - Miyagi, JP
Masaru Nishino - Hillsboro OR, US
Reo Kosaka - Miyagi, JP
Matthew Gwinn - Billerica MA, US
Luis Fernandez - Billerica MA, US
Kenichi Oyama - Yamanashi, JP
Sakurako Natori - Yamanashi, JP
Noriaki Okabe - Tokyo, JP

International Classification:

H01J 37/20
H01J 37/317
C23C 14/46
C23C 14/50
H01L 21/68

Abstract:

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

US Patent:

20210376123, Dec 2, 2021

Filed:

May 25, 2021

Appl. No.:

17/329178

Inventors:

- Tokyo, JP
Atsushi TSUBOI - Tokyo, JP
Atsushi ENDO - Yamanashi, JP
Masanobu IGETA - Tokyo, JP
Masaru SUGIMOTO - Hillsboro OR, US
Luis FERNANDEZ - Billerica MA, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 29/66
H01L 29/06
H01L 29/423
H01L 29/786
H01L 21/02

Abstract:

A method including depositing a dielectric film on a substrate including stacked structures with recessed portions formed on side surfaces of each of the stacked structures, wherein the dielectric film is deposited so that the stacked structures are covered at a thickness which is equal to or less than half a width of the recessed portions; filling a trench or trenches that are located between the stacked structures with a sacrificial film; etching the sacrificial film along the stacked structures; etching the dielectric film so that the dielectric film is etched more than the sacrificial film; removing the sacrificial film; after the removing of the sacrificial film, depositing a dielectric film to a thickness equal to or less than half the width of the recessed portions; and etching the deposited dielectric film, on a condition that the deposited dielectric film remains in the recessed portions.

US Patent:

20210335568, Oct 28, 2021

Filed:

Sep 11, 2020

Appl. No.:

17/018741

Inventors:

- Tokyo, JP
Hiromitsu Kambara - Miyagi, JP
Masaru Nishino - Miyagi, JP
Reo Kosaka - Hillsboro OR, US
Matthew Gwinn - Winchendon MA, US
Luis Fernandez - Billerica MA, US
Kenichi Oyama - Yamanashi, JP
Sakurako Natori - Yamanashi, JP
Noriaki Okabe - Tokyo, JP

International Classification:

H01J 37/20
H01J 37/317

Abstract:

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Address:

16040 SW 152 Ave, Miami, FL 33187

Phone:

(305)5985100

VIN:

2HNYD2H27CH527424

Make:

ACURA

Model:

MDX

Year:

2012

Address:

7981 SW 64 St, Miami, FL 33143

Phone:

(305)5253823

VIN:

WBAKA4C52CDS99232

Make:

BMW

Model:

7 SERIES

Year:

2012

Address:

5757 Collins Ave APT 1504, Miami Beach, FL 33140

Phone:

(305)2639868

VIN:

WDDGF4HB9CR233133

Make:

MERCEDES-BENZ

Model:

C-CLASS

Year:

2012

Address:

13361 SW 74 St, Miami, FL 33183

Phone:

(786)2997583

VIN:

2G1WT57KX91274242

Make:

CHEVROLET

Model:

IMPALA

Year:

2009

Address:

5248 SW 131 Ter, Miramar, FL 33027

VIN:

KMHCN46C39U359495

Make:

HYUNDAI

Model:

ACCENT

Year:

2009

Address:

5248 SW 131 Ter, Miramar, FL 33027

VIN:

3N1AB61E38L728408

Make:

NISSAN

Model:

SENTRA

Year:

2008

Address:

9735 NW 44 Ter, Doral, FL 33178

Phone:

(305)4778354

VIN:

1J4GK48K57W509735

Make:

JEEP

Model:

LIBERTY

Year:

2007

Address:

16920 NE 3 Ave, North Miami Beach, FL 33162

VIN:

2T1BR32E57C721682

Make:

TOYOTA

Model:

COROLLA

Year:

2007