Manuel V Rivera

US Patent:

20070187386, Aug 16, 2007

Filed:

Feb 10, 2006

Appl. No.:

11/351816

Inventors:

Sang-Shin Kim - Glen Ivy CA, US
Manuel Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR

Assignee:

POONGSAN MICROTEC CORPORATION - BUSAN

International Classification:

H01L 21/00
F27D 11/00

US Classification:

219385000, 438038000

Abstract:

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

US Patent:

20090148965, Jun 11, 2009

Filed:

Feb 4, 2009

Appl. No.:

12/322665

Inventors:

Sang-Shin Kim - Glen Ivy CA, US
Manuel Scott Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR

Assignee:

POONGSAN MICROTEC CORPORATION - BUSAN

International Classification:

H01L 21/66
H01L 21/30

US Classification:

438 14, 438795, 257E21525, 257E21211

Abstract:

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.

US Patent:

20130302916, Nov 14, 2013

Filed:

Jul 3, 2013

Appl. No.:

13/935434

Inventors:

- Busan, KR
Manuel Scott Rivera - San Jose CA, US
Suk-Dong Hong - Busan, KR

International Classification:

H01L 21/66

US Classification:

438 5

Abstract:

Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.