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Marilyn Irene Wright

age ~65

from Hillsboro, OR

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Also known as:
  • Marilyn I Wright
  • Marliyn I Wright
  • Marilyn W Abeyta
  • Marilyn Hall
  • Marilyn I Wriight
  • Right M Marilyn
  • Marilyn A
Related to:
Connected to:

Marilyn Wright Phones & Addresses

  • Hillsboro, OR
  • Concord, NC
  • Toccoa, GA
  • Santa Clara, CA
  • 733 Glencoe Ct, Sunnyvale, CA 94087
  • Austin, TX
  • Fort Collins, CO

Work

  • Company:
    Beverly-Hanks & Associates
  • Address:
    One Town Square Blvd., Suite 140
  • Phones:
    (828)6848999 (828)2793980 (828)2740813

Education

  • School / High School:
    Michigan State University
    1986

Languages

English • French

Awards

Healthgrades Honor Roll

Ranks

  • Certificate:
    Child & Adolescent Psychiatry, 2007

Images

Specialities

Child & Adolescent Psychiatry

Real Estate Brokers

Marilyn Wright Photo 1

Marilyn Wright, Asheville Nc 28803 NC

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Specialties:
Buyer's Agent
Listing Agent
Relocation
Foreclosure
Work:
Beverly-Hanks & Associates
One Town Square Blvd., Suite 140
(828)6848999 (Office), (828)2793980 (Cell), (828)2740813 (Fax)
Description:
I am aBuncombe County native whose family roots proudly go back 7 generations in the mountains of Western North Carolina. My mountain upbringing has servedme well with an incredible work ethic, commitment to family, values, and faith. For yearsI haveworked alongsidemy husband of 26 years in the family business; Wright Family Custom Homes, where we designed, built, and sold new homes all over Western North Carolina, including Biltmore Lake and The Ramble Biltmore Forest.We have been honored with Gold Awards by the Asheville Homebuilders Association.Our dedication to honesty, integrity, and craftsmanship has setus apart as leaders in the industry.I worked as a Design Coordinator whereI designed and guided clients through the custom home construction process. I have personally overseen home construction from start to finish as a Job Superintendent, providing unsurpassed customer satisfaction skills and knowledge of homes and development. I am a National Homebuilders Associate and a member of the Asheville Homebuilders Association. Iwas honored with the Beverly-Hanks 2009 Rising Star Award! Very humbling but a true testament tomy work for this company and for the satisfaction ofmy customers! "I promise to provide you with the highest quality of professionalism and integrity in the real estate industry. Whether you are looking for that perfect property or you are preparing for that next move, my purpose is to serve you and serve you well! In my business, it is personal! I am Marilyn Wright and I am "Working Hard to Get You Home"

License Records

Marilyn L Wright

License #:
738 - Expired
Issued Date:
Aug 5, 1982
Renew Date:
Mar 31, 2002
Expiration Date:
Mar 31, 2002
Type:
Nail Technician

Marilyn Lee Wright

License #:
RN29450 - Expired
Category:
Nursing
Type:
Registered Nurse
Name / Title
Company / Classification
Phones & Addresses
Marilyn Denise Wright
Marilyn Wright MD
Psychiatrist
270 International Cir, San Jose, CA 95119
(408)9726530
Marilyn H. Wright
MARILYN WRIGHT ENTERPRISES, LLC
Marilyn Wright
MASSILLON USBC WOMEN'S BOWLING ASSOCIATION
Marilyn Wright
Treasurer
Charlotte Speech & Hearing Center
Mfg Surgical Appliances/Supplies
210 E Woodlawn Rd, Charlotte, NC 28217
741 Kenilworth Ave, Charlotte, NC 28204
(704)2510685, (704)5238031, (704)5238027
Marilyn D. Wright
Medical Doctor
Gordon Calvin
Medical Doctor's Office
260 International Cir, San Jose, CA 95119

Us Patents

  • Method For Reducing Gate Line Deformation And Reducing Gate Line Widths In Semiconductor Devices

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  • US Patent:
    6764947, Jul 20, 2004
  • Filed:
    Feb 14, 2003
  • Appl. No.:
    10/366801
  • Inventors:
    Darin Chan - Campbell CA
    Douglas J. Bonser - Austin TX
    Marina V. Plat - San Jose CA
    Marilyn I. Wright - Austin TX
    Chih Yuh Yang - San Jose CA
    Lu You - San Jose CA
    Scott A. Bell - San Jose CA
    Philip A. Fisher - Foster City CA
  • Assignee:
    Advanced Micro Devices, Inc. - Sunnyvale CA
  • International Classification:
    H01L 214763
  • US Classification:
    438645, 438706, 438639
  • Abstract:
    A silicon oxide stress relief portion is provided between an amorphous carbon hardmask and a polysilicon layer to be etched to form a gate line. The stress relief portion relieves stress between the hardmask and the polysilicon, thereby reducing the risk of delamination of the hardmask prior to patterning of the polysilicon. The stress relief portion may be trimmed prior to patterning and used as an etch mask for patterning the polysilicon. The amorphous carbon hardmasked may be trimmed prior to patterning the stress relief portion to achieve a further reduction in gate line width.

  • Cvd Organic Polymer Film For Advanced Gate Patterning

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  • US Patent:
    6864556, Mar 8, 2005
  • Filed:
    Dec 31, 2002
  • Appl. No.:
    10/335445
  • Inventors:
    Lu You - San Jose CA, US
    Marina V. Plat - San Jose CA, US
    Chih Yuh Yang - San Jose CA, US
    Scott A. Bell - San Jose CA, US
    Richard J. Huang - Cupertino CA, US
    Christopher F. Lyons - Fremont CA, US
    Mark S. Chang - Los Altos CA, US
    Marilyn I. Wright - Austin TX, US
  • Assignee:
    Advanced Micro Devices, Inc. - Sunnyvale CA
  • International Classification:
    H01L021/47
    H01L031/0232
  • US Classification:
    257437, 438636
  • Abstract:
    A bottom anti-reflective coating comprising an organic polymer layer having substantially no nitrogen and a low compressive stress in relation to a polysilicon layer is employed as the lower layer of a bi-layer antireflective coating/hardmask structure to reduce deformation of a pattern to be formed in a patternable layer. The organic polymer layer is substantially transparent to visible radiation, enabling better detection of alignment marks during a semiconductor device fabrication process and improving overlay accuracy. The organic polymer layer provides excellent step coverage and may be advantageously used in the fabrication of structures such as FinFETs.

  • L-Shaped Spacer Incorporating Or Patterned Using Amorphous Carbon Or Cvd Organic Materials

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  • US Patent:
    6893967, May 17, 2005
  • Filed:
    Jan 13, 2004
  • Appl. No.:
    10/755911
  • Inventors:
    Marilyn I. Wright - Sunnyvale CA, US
    Douglas J. Bonser - Austin TX, US
    Lu You - San Jose CA, US
    Kay Hellig - Dresden, DE
  • Assignee:
    Advanced Micro Devices, Inc. - Sunnyvale CA
  • International Classification:
    H01L029/72
  • US Classification:
    438691, 438692, 438694, 257333, 257401
  • Abstract:
    A multilayer L-shaped spacer is formed of a lower portion comprising a CVD organic material or amorphous carbon, and an upper portion comprised of a protective material. The upper portion is patterned using a photoresist mask. During that patterning, the underlying substrate is protected by a layer of CVD organic material or amorphous carbon. The CVD organic material or amorphous carbon is then patterned using the patterned protective material as a mask. The chemistry used to pattern the CVD organic material or amorphous carbon is relatively harmless to the underlying substrate. Alternatively, an L-shaped spacer is patterned without using a photoresist mask by forming an amorphous carbon spacer around a gate that is covered with a conformal layer of a conventional spacer material. The conventional spacer material is patterned using the amorphous carbon spacer as an etch mask. The amorphous carbon spacer is easily formed without the need for lithographic patterning, and therefore this method is preferable to methods using photoresist masks.

  • Antireflective Bi-Layer Hardmask Including A Densified Amorphous Carbon Layer

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  • US Patent:
    6900002, May 31, 2005
  • Filed:
    Nov 19, 2002
  • Appl. No.:
    10/299427
  • Inventors:
    Marina V. Plat - San Jose CA, US
    Marilyn I. Wright - Sunnyvale CA, US
    Lu You - San Jose CA, US
    Scott A. Bell - San Jose CA, US
  • Assignee:
    Advanced Micro Devices, Inc. - Sunnyvale CA
  • International Classification:
    G03F007/00
  • US Classification:
    430328, 430296, 430311, 430313, 430322, 430323, 430330, 4273722
  • Abstract:
    An amorphous carbon layer of an antireflective bi-layer hardmask is processed to increase its density prior to patterning of an underlying polysilicon layer using the bi-layer hardmask. The increased density of the layer increases its resistance to polysilicon etch chemistry, thus reducing the likelihood of patterning inaccuracies resulting from amorphous carbon depletion during polysilicon etch, and enabling the patterning of thicker polysilicon layers than can be reliably patterned without densification. The increased density also reduces stresses, thus reducing the likelihood of delamination. Densification may be performed by UV or e-beam irradiation after formation of an overlying protective layer. Densification may also be performed by annealing the amorphous carbon layer in situ prior to formation of the overlying protective layer. In the latter case, annealing reduces the amount of outgassing that occurs during formation of the protective layer, thus reducing the formation of pin holes.

  • Method For Patterning A Feature Using A Trimmed Hardmask

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  • US Patent:
    6913958, Jul 5, 2005
  • Filed:
    Feb 14, 2003
  • Appl. No.:
    10/366800
  • Inventors:
    Marina V. Plat - San Jose CA, US
    Marilyn I. Wright - Sunnyvale CA, US
    Chih Yuh Yang - San Jose CA, US
    Douglas J. Bonser - Austin TX, US
  • Assignee:
    Advanced Micro Devices - Sunnyvale CA
  • International Classification:
    H01L021/336
    H01L021/84
    H01L021/3205
    H01L021/302
  • US Classification:
    438197, 438717, 438585, 438151
  • Abstract:
    In the formation of a semiconductor device, one or more hardmasks are formed during a process for patterning a device feature. One or more of the hardmasks is subjected to an isotropic etch to trim the hardmask prior to patterning an underlying layer. The trimmed hardmask layer is preferably an amorphous carbon layer.

  • Semiconductor Device Having An Organic Anti-Reflective Coating (Arc) And Method Therefor

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  • US Patent:
    6972255, Dec 6, 2005
  • Filed:
    Jul 28, 2003
  • Appl. No.:
    10/628668
  • Inventors:
    Douglas M. Reber - St. Ismier, FR
    Mark D. Hall - Austin TX, US
    Kurt H. Junker - Austin TX, US
    Kyle W. Patterson - Froges, FR
    Tab Allen Stephens - Austin TX, US
    Edward K. Theiss - Cedar Park TX, US
    Marilyn Irene Wright - Sunnyvale CA, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
    Advanced Micro Devices, Inc. - Sunnyvale CA
  • International Classification:
    H01L021/44
  • US Classification:
    438669, 438671, 438725
  • Abstract:
    In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.

  • Capping Layer For Reducing Amorphous Carbon Contamination Of Photoresist In Semiconductor Device Manufacture; And Process For Making Same

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  • US Patent:
    7109101, Sep 19, 2006
  • Filed:
    May 6, 2003
  • Appl. No.:
    10/430711
  • Inventors:
    Marilyn I. Wright - Sunnyvale CA, US
    Kurt H. Junker - Austin TX, US
    Kyle Patterson - Froges, FR
  • Assignee:
    AMD, Inc. - Sunnyvale CA
    Motorola, Inc. - Schaumberg IL
  • International Classification:
    H01L 21/3205
    H01L 21/4763
    H01L 23/58
    H01L 29/76
    H01L 29/788
  • US Classification:
    438585, 438586, 438587, 438303, 438624, 438637, 257640, 257401, 257315, 257295
  • Abstract:
    In the fabrication of semiconductor devices using the PECVD process to deposit hardmask material such as amorphous carbon, structure and process are described for reducing migration of species from the amorphous carbon which can damage an overlying photoresist. In one embodiment useful to 248 nm and 193 nm photolithography exposure wavelengths, amorphous carbon is plasma-deposited on a substrate to pre-defined thickness and pre-defined optical properties. A SiON layer is combined with a silicon-rich oxide layer, a silicon-rich nitride layer or a TEOS layer to create a capping layer resistant to species-migration. Layers are formulated to pre-determined thicknesses, refractive indices and extinction coefficients. The capping stacks constitute an effective etch mask for the amorphous carbon; and the hardmask properties of the amorphous carbon are not compromised. The disclosure has immediate application to fabricating polysilicon gates.

  • Semiconductor Device Having An Organic Anti-Reflective Coating (Arc) And Method Therefor

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  • US Patent:
    7199429, Apr 3, 2007
  • Filed:
    Apr 6, 2005
  • Appl. No.:
    11/100163
  • Inventors:
    Douglas M. Reber - St. Ismier, FR
    Mark D. Hall - Austin TX, US
    Kurt H. Junker - Austin TX, US
    Kyle W. Patterson - Froges, FR
    Tab Allen Stephens - Austin TX, US
    Edward K. Theiss - Cedar Park TX, US
    Marilyn Irene Wright - Sunnyvale CA, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    H01L 29/76
    H01L 29/94
    H01L 31/062
    H01L 31/113
    H01L 31/119
  • US Classification:
    257368, 257369
  • Abstract:
    In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.

Medicine Doctors

Marilyn Wright Photo 2

Dr. Marilyn D Wright, San Jose CA - MD (Doctor of Medicine)

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Specialties:
Child & Adolescent Psychiatry
Address:
6620 Via Del Oro, San Jose, CA 95119
(408)3602300 (Phone)

260 International Cir, San Jose, CA 95119
(408)9727000 (Phone), (408)3602397 (Fax)
Certifications:
Child & Adolescent Psychiatry, 2007
Psychiatry, 1993
Awards:
Healthgrades Honor Roll
Languages:
English
French
Education:
Medical School
Michigan State University
Graduated: 1986
Medical School
Spectrum Health Butterworth Camp
Graduated: 1986
Medical School
University Hi J a Burns School Med
Graduated: 1986
Marilyn Wright Photo 3

Marilyn Denise Wright

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Specialties:
Psychiatry
Child & Adolescent Psychiatry
Education:
Michigan State University(1986)

Resumes

Marilyn Wright Photo 4

Marilyn Wright

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Location:
United States
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Marilyn Wright

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Location:
United States
Marilyn Wright Photo 6

Instructor At Central Piedmont Community College

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Position:
Instructor at Central Piedmont Community College
Location:
Charlotte, North Carolina Area
Industry:
Higher Education
Work:
Central Piedmont Community College
Instructor
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Marilyn Wright

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Location:
United States
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Marilyn Wright

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Location:
United States
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Marilyn Wright

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Location:
United States
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Marilyn Wright

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Location:
United States
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Marilyn Wright

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Location:
United States

Plaxo

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Marilyn Wright

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Marilyn Wright

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Wright Trees

Classmates

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Marilyn Haigler (Wright)

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Schools:
Fitzgerald High School Fitzgerald GA 1976-1980
Community:
Maynord Freeman
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Marilyn Cowart (Wright)

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Schools:
Wharton High School Wharton TX 1966-1970
Community:
Stephen Ribnick
Biography:
After I left high school, I couldn't keep my legs shut. I ended up living in trailer...
Marilyn Wright Photo 16

Marilyn Helgeson (Wright)

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Schools:
Mater Dei High School Santa Ana CA 1960-1963
Community:
Nancy Williams, Terry Thompson
Biography:
I collect interesting people. My last house guest was Alexi Dostoyevsky, great gran...
Marilyn Wright Photo 17

Marilyn Curry (Wright)

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Schools:
Hattiesburg High School Hattiesburg MS 1950-1954
Community:
John Schlottman, Joellen Cochran
Marilyn Wright Photo 18

Marilyn Wright (Sholtis)

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Schools:
Spangler High School Spangler PA 1959-1963
Community:
Arthur Scarpo, Joan Platko
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Marilyn Wright

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Schools:
Hattiesburg High School Hattiesburg MS 1950-1954
Community:
John Schlottman, Joellen Cochran
Marilyn Wright Photo 20

Marilyn Wright (Ferguson)

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Schools:
Huntingburg High School Huntingburg IN 1972-1976
Community:
Steve Emmons, Deborah Altmeyer, Diana Sutter, Bill Logsdon, Hattie Kruger
Marilyn Wright Photo 21

Marilyn Wright (Egelhofer)

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Schools:
Sacred Heart High School Los Angeles CA 1957-1961
Community:
Angelita Gonzales, Debra Sanchez, Ruben Rosales, Arturo Yanez, Marie Rey

Facebook

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Marilyn Bennett Wright

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Marilyn Wright Photo 23

Marilyn Wright Pollock

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Marilyn Wright Photo 24

Marilyn Lanigan Wright

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Marilyn Wright Photo 25

Marilyn Egelhofer Wright

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Marilyn Wright Photo 26

Marilyn Thomas Wright

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Marilyn Wright Photo 27

Marilyn Wright

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Marilyn Wright Photo 28

Marilyn Wright Holman

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Marilyn Wright Photo 29

Marilyn Wright Y

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Youtube

Give Me a Clean Heart

Give Me a Clean Heart

Provided to YouTube by CDBaby Give Me a Clean Heart Marilyn Wright Gi...

  • Duration:
    3m 50s

Marilyn Wright God Bless The Child

Marilyn Wright God Bless The Child

God Bless the Child @marilynwright_ Music that flows from a Baby Grand...

  • Duration:
    3m 15s

Marilyn Wright-"Love Like Mine"

Marilyn Wright-"Love Like Mine"

"Love Like Mine", song written and sung by solo Gospel artist, Marilyn...

  • Duration:
    4m 51s

"Great Is Thy Faithfulness" by Marilyn Wright

"Great Is Thy Faithfulness" by Marilyn Wright

Cover of Great Is Thy Faithfulness by Marilyn Wright. Feel free to lea...

  • Duration:
    9m 19s

Great Is Thy Faithfulness by Marilyn Wright

Great Is Thy Faithfulness by Marilyn Wright

Great Is Thy Faithfulness by Marilyn Wright. Visit .

  • Duration:
    9m 19s

Marilyn Wright- "What About You" Cover

Marilyn Wright- "What About You" Cover

Marilyn Wright singing a cover of Ce Ce Winans' "What About You". Leav...

  • Duration:
    4m 17s

Myspace

Marilyn Wright Photo 30

Marilyn Wright

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Locality:
Ohio
Gender:
Female
Birthday:
1948
Marilyn Wright Photo 31

Marilyn Wright

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Marilyn wright

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Locality:
HONOLULU, Hawaii
Gender:
Female
Birthday:
1914
Marilyn Wright Photo 33

marilyn wright

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Locality:
OLNEY, Illinois
Gender:
Female
Birthday:
1909
Marilyn Wright Photo 34

Marilyn Wright

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Flickr

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Googleplus

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Marilyn Wright

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Marilyn Wright

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Marilyn Wright

Tagline:
19 yr. old Minister, Gospel Recording Artist, Speaker, Actress, Writer. Founder of The Diamond Network -God's Superstar and Intimate Worshiper...
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Marilyn Wright

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Marilyn Wright

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Marilyn Wright

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Marilyn Wright

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Marilyn Wright

Get Report for Marilyn Irene Wright from Hillsboro, OR, age ~65
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