Mark W Boehm

US Patent:

20020086242, Jul 4, 2002

Filed:

Nov 8, 2001

Appl. No.:

10/005779

Inventors:

Mark Boehm - Sachse TX, US
Amy Zhou - Plano TX, US
Yu-Tai Lee - Plano TX, US
Ashesh Parikh - Frisco TX, US
David Curran - Plano TX, US

International Classification:

G03F007/30
G03F007/32
G03F007/40

US Classification:

430/311000, 430/328000, 430/331000, 430/325000

Abstract:

Wafer developer solution is removed in a wafer spinning process wherein the wafer is spun for a period of time before a deionized water bath is introduced. The delay allows more developer to be spun off before introducing the water, which eliminates residue and particulates on the wafer surface.

US Patent:

20090170222, Jul 2, 2009

Filed:

Nov 25, 2008

Appl. No.:

12/323025

Inventors:

Brian Douglas Reid - Plano TX, US
James David Bernstein - Plano TX, US
Hongyu Yue - Plano TX, US
Howie Hui Yang - Carrollton TX, US
Mark Boehm - Wylie TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/66

US Classification:

438 7, 257E2153

Abstract:

A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.