The company was founded in 1990 by former NOSC researchers Dr. Ron Reedy and Dr. Mark Burgener, along with partner Rory Moore. For their development ...
Name / Title
Company / Classification
Phones & Addresses
Mark Burgener Vice President
Cardio Dynamics Surgical and Medical Instruments · Surgical & Medical Instrument Mfg
6179 Nancy Rdg Dr, San Diego, CA 92121 6175 Nancy Rdg Dr STE 300, San Diego, CA 92121 (858)5350202, (858)5350055
Mark L. Burgener
Mark L. Burgener Consulting LLC
5451 Madison Ave, San Diego, CA 92115
Mark Burgener Co-Founder, Vice President Advanced Products
Peregrine Semiconductor Semiconductors · Mfg Semiconductors/Related Devices · Semiconductors and Related Devices
9380 Carroll Park Dr, San Diego, CA 92121 9450 Carroll Park Dr , San Diego, CA 92121 2921 Carlisle Blvd STE 200 K , Albuquerque, NM 87109 9450 Carroll Park Dr, San Diego, CA 92121 (858)7319400, (858)6253310, (858)7319499, (858)4550660
Us Patents
Radiation-Hardened Silicon-On-Insulator Cmos Device, And Method Of Making The Same
James S. Cable - San Diego CA Eugene F. Lyons - Santee CA Michael A. Stuber - Carlsbad CA Mark L. Burgener - San Diego CA
Assignee:
Peregrine Semiconductor Corporation - San Diego CA
International Classification:
H01L 2701
US Classification:
257347, 257348, 257349, 257350, 257351, 257352
Abstract:
A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.
Switch Circuit And Method Of Switching Radio Frequency Signals
Mark L. Burgener - San Diego CA James S. Cable - San Diego CA
Assignee:
Peregrine Semiconductor Corporation - San Diego CA
International Classification:
H04B 128
US Classification:
455333, 455425, 4555501, 257341
Abstract:
A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a âstackedâ or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
Mark L. Burgener - San Diego CA, US James S. Cable - Del Mar CA, US
Assignee:
Peregrine Semiconductor Corporation - San Diego CA
International Classification:
H04B 1/04
US Classification:
4551271, 4551273, 455126, 455129, 330 10
Abstract:
A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Preferred fabrication techniques include stacking multiple FETs to form switching devices. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.
Switch Circuit And Method Of Switching Radio Frequency Signals
Mark L. Burgener - San Diego CA, US James S. Cable - Del Mar CA, US
Assignee:
Peregrine Semiconductor Corporation - San Diego CA
International Classification:
H04B 1/28 H01L 29/76 H04Q 7/20 H04M 1/00
US Classification:
455333, 455425, 4555501, 257341
Abstract:
A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
Mark L. Burgener - San Diego CA, US James S. Cable - San Diego CA, US
Assignee:
Peregrine Semiconductor Corporation - San Diego CA
International Classification:
H03F 3/04
US Classification:
330311, 330277
Abstract:
A method and apparatus is described for controlling conduction between two nodes of an integrated circuit via a stack of FETs of common polarity, coupled in series. In an RF Power Amplifier (PA) having appropriate output filtering, or in a quad mixer, stacks of two or more FETs may be used to permit the use of increased voltages between the two nodes. Power control for such RF PAs may be effected by varying a bias voltage to one or more FETs of the stack. Stacks of three or more FETs may be employed to control conduction between any two nodes of an integrated circuit.
Switch Circuit And Method Of Switching Radio Frequency Signals
Mark L. Burgener - San Diego CA, US James S. Cable - Del Mar CA, US
Assignee:
Peregrine Semiconductor Corporation - San Diego CA
International Classification:
H04B 1/28 H01L 26/76 H04Q 7/20 H04M 1/00
US Classification:
455333, 455425, 4555501, 257241
Abstract:
An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
Switch Circuit And Method Of Switching Radio Frequency Signals
A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The RF switch provides improvements in insertion loss, switch isolation, and switch compression. An improved voltage reducing circuit is described.
Mark L. Burgener - San Diego CA, US Dylan Kelly - San Diego CA, US James S. Cable - San Diego CA, US
Assignee:
Peregrine Semiconductor Corporation - San Diego CA
International Classification:
H02M 3/18 G05F 3/16 H03B 5/00
US Classification:
327536, 327537, 363 60
Abstract:
A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.