Mark W Mccord

US Patent:

6586736, Jul 1, 2003

Filed:

Sep 10, 1999

Appl. No.:

09/394133

Inventors:

Mark A. McCord - Mountain View CA

Assignee:

KLA-Tencor, Corporation - San Jose CA

International Classification:

H01J 37147

US Classification:

250310, 250396 R, 250397

Abstract:

A method and apparatus for generating an image of a sample with a electron beam apparatus is disclosed. The image is generated from a portion of the sample with a measurement device having a source unit for directing an electron beam substantially towards the sample. The measurement device also has a detector for detecting particles that are emitted from the sample, an electrode proximal to the sample having a hole through which the electron beam and a portion of the emitted particles may pass, and an image generator for generating the image of the sample from the detected particles. A first voltage is applied to the electrode when the electron beam is substantially in a center of the hole. The first voltage is selected to control positive charge build up on the sample. A second voltage is applied to the electrode when the electron beam is deflected a predetermined distance from the center of the hole.

US Patent:

6597006, Jul 22, 2003

Filed:

Oct 9, 2001

Appl. No.:

09/974560

Inventors:

Mark McCord - Mountain View CA
Jun Pei - Campbell CA

Assignee:

KLA-Tencor Technologies Corp. - Milpitas CA

International Classification:

G01N 2186

US Classification:

25055919, 25055929, 3562372

Abstract:

Systems and methods for determining the height of a surface of a specimen, such as a surface of a semiconductor device wafer are provided. A system may be configured to generate a comparison signal that may used to alter a Z-axis fine height adjustment of the system. The system may include for example, a processing tool, a metrology tool, or an inspection tool that may be used in semiconductor device fabrication. In this manner, the system may be configured to maintain a constant working distance between the wafer surface and an optical column of the system. A system may include an off-axis dual beam symmetric height sensor due to mechanical constraints of the system. The dual beam symmetric height sensor may provide automatic focusing of the wafer with high precision by substantially eliminating wafer pattern-induced error in comparison signals generated by the system.

US Patent:

6627884, Sep 30, 2003

Filed:

Jul 23, 2001

Appl. No.:

09/912732

Inventors:

Mark A. McCord - Mountain View CA
David Walker - Sunol CA
Jun Pei - Campbell CA
Neil Richardson - Palo Alto CA

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

G21K 700

US Classification:

250306, 250305, 250302, 250310, 250251, 378 84, 378 85

Abstract:

Disclosed are methods and apparatus for simultaneously flooding a sample (e. g. , a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample.

US Patent:

6664546, Dec 16, 2003

Filed:

Feb 10, 2000

Appl. No.:

09/502554

Inventors:

Mark A. McCord - Mountain View CA
Jan Lauber - Menlo Park CA
Jun Pei - Campbell CA
Jorge P. Fernandez - San Mateo CA

Assignee:

KLA-Tencor - San Jose CA

International Classification:

H01J 3721

US Classification:

250397, 250306, 250310

Abstract:

Disclosed is a method and apparatus for generating an image from a sample. The apparatus includes a charged particle beam generator arranged to generate and control a charged particle beam substantially towards a portion of the sample and a detector arranged to detect charged particles originating from the sample portion to allow generation of an image from the detected charged particles. The apparatus further includes a measurement device arranged to measure a characteristic of the sample portion to obtain a surface voltage value of the sample portion that is exposed to the charged particle beam. For example, the measurement device is an electrostatic voltmeter positioned to obtain a surface voltage value of the exposed sample portion. A charged particle beam is directed substantially towards a portion of the sample under a first set of operating conditions. A surface charge value of the sample portion is obtained under the first set of operating conditions.

US Patent:

7171038, Jan 30, 2007

Filed:

Dec 14, 2001

Appl. No.:

10/017860

Inventors:

David Adler - San Jose CA, US
Kirk Bertsche - San Jose CA, US
Mark McCord - Mountain View CA, US
Stuart Friedman - Palo Alto CA, US

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

G06K 9/00

US Classification:

382149, 250307

Abstract:

A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

US Patent:

7176468, Feb 13, 2007

Filed:

Sep 16, 2004

Appl. No.:

10/942184

Inventors:

Kirk J. Bertsche - San Jose CA, US
Mark A. McCord - Los Gatos CA, US

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

H01J 37/244

US Classification:

250399, 250396 R

Abstract:

A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.

US Patent:

7315022, Jan 1, 2008

Filed:

Jan 6, 2005

Appl. No.:

11/031091

Inventors:

David L. Adler - San Jose CA, US
Mark A. McCord - Los Gatos CA, US
Mehdi Vaez-Iravani - Los Gatos CA, US
Liqun Han - Fremont CA, US
Kirk J. Bertsche - San Jose CA, US

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

H01J 37/20
G01R 31/28

US Classification:

250310, 250306, 250307, 250397

Abstract:

One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.

US Patent:

7507959, Mar 24, 2009

Filed:

Dec 21, 2006

Appl. No.:

11/644591

Inventors:

Kirk J. Bertsche - San Jose CA, US
Mark A. McCord - Los Gatos CA, US

Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA

International Classification:

H01J 37/14
H01J 37/28

US Classification:

250306, 250305, 250310, 324751

Abstract:

A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.