Mark R Merrill

US Patent:

20210151290, May 20, 2021

Filed:

Jan 29, 2021

Appl. No.:

17/163248

Inventors:

- Fremont CA, US
Shuogang Huang - Fremont CA, US
Zhimin Wan - Fremont CA, US
Mark Merrill - Fremont CA, US

International Classification:

H01J 37/305
H01L 21/67
H01L 21/687
H01L 21/3065
H01J 37/32

Abstract:

Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.

US Patent:

20190148109, May 16, 2019

Filed:

Nov 10, 2017

Appl. No.:

15/809957

Inventors:

- Fremont CA, US
Shuogang Huang - Fremont CA, US
Zhimin Wan - Fremont CA, US
Mark Merrill - Fremont CA, US

International Classification:

H01J 37/305
H01L 21/67
H01L 21/687
H01L 21/3065
H01L 21/66
H01J 37/32
H01J 37/20

Abstract:

Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The size of the plurality holes varies along an axis such that the ion density of the ion beam also varies along the axis. The density of the plurality of holes varies along an axis such that the ion density of the ion beam also varies along the axis. In some embodiments, the energies of a beamlet or multiple beamlets may be individual defined to adjust beam energy density.