Mark J Rubin

US Patent:

6429062, Aug 6, 2002

Filed:

Sep 20, 1999

Appl. No.:

09/400610

Inventors:

Mark E. Rubin - San Jose CA

Assignee:

Koninklike Philips Electronics N.V. - Eindhoven

International Classification:

H01L 218238

US Classification:

438199, 438231, 438232, 438301, 438305, 438306

Abstract:

In the fabrication of a 0. 10 micron CMOS integrated circuit, a high-energy plasma etch is used to pattern a polysilicon layer and an underlying gate oxide layer to define gate structures. A thermal oxide step anneals silicon exposed and damaged by this etch. Instead of using this thermal oxide as a blocking layer for a source/drain extension implant, it is removed so as to expose the silicon surfaces of the source/drain regions. A TEOS deposition results in a carbon-bearing silicon dioxide layer in contact with the surfaces of the crystalline source/drain regions. A boron PMOS source/drain extension implant is performed through this carbon-bearing blocking layer. Subsequent steps result in the formation of sidewall spacers, heavily doped source/drain sections, submetal dielectric, an intermetal dielectric interconnect structure, and passivation. The relatively high interstitial recombination rate of the carbon-bearing blocking layer attracts a flow of interstitial silicon. This flow draws some of the boron extension implant with itâeffectively limiting the depth and lateral extension (under the gate) of the boron.

US Patent:

7926018, Apr 12, 2011

Filed:

Sep 25, 2007

Appl. No.:

11/860775

Inventors:

Victor Moroz - Saratoga CA, US
Xi-Wei Lin - Fremont CA, US
Mark Rubin - San Jose CA, US

Assignee:

Synopsys, Inc. - Mountain View CA

International Classification:

G06F 17/50
G06F 9/45

US Classification:

716132, 716 51, 716 53, 716 55, 716109, 716110, 716112, 716120, 716136, 716139

Abstract:

A system that generates a layout for a transistor is presented. During operation, the system receives a transistor library which includes operating characteristics of fabricated transistors correlated to transistor gate shapes. The system also receives one or more desired operating characteristics for the transistor. Next, the system determines a transistor gate shape for the transistor based on the transistor library so that a fabricated transistor with the transistor gate shape substantially achieves the one or more desired operating characteristics. The system then generates the layout for the transistor which includes the transistor gate shape.

US Patent:

8620935, Dec 31, 2013

Filed:

Jun 22, 2012

Appl. No.:

13/531337

Inventors:

Mark Rubin - San Carlos CA, US
Brian Hein - Pacifica CA, US

Assignee:

Yahoo! Inc. - Sunnyvale CA

International Classification:

G06F 7/00
G06F 17/30

US Classification:

707754

Abstract:

An Internet or other online service is personalized or customized based on data collected for a user of a computing device. In one embodiment, a method includes: storing a plurality of person profiles for persons associated with communications received by a user of a computing device; receiving data associated with an online service; and filtering, using at least one processor, the data based on the plurality of person profiles, wherein the filtered data is for display to the user on the computing device.

US Patent:

20040089790, May 13, 2004

Filed:

Feb 21, 2003

Appl. No.:

10/370950

Inventors:

Mark Rubin - San Jose CA, US
Yang Zhao - Fremont CA, US

International Classification:

H01L031/00

US Classification:

250/214100

Abstract:

A photodetector includes a first conductivity type semiconductor material (e.g., a p-type material) and one or more regions of semiconductor material of a second conductivity type (e.g., regions of n-type material), each forming a pn junction with the first conductivity type semiconductor material. The one or more regions collectively have a first layout area. One or more further regions of semiconductor material of the second conductivity type (e.g., further regions of n-type material) each form a pn junction with the first conductivity type semiconductor material. The one or more further regions collectively having a second layout area. A light blocking material covers the one or more further regions. The first layout area is greater than the second layout area.

US Patent:

63262835, Dec 4, 2001

Filed:

Mar 7, 2000

Appl. No.:

9/519908

Inventors:

Victor Liang - Milpitas CA
Olivier Laparra - San Jose CA
Mark Rubin - San Jose CA

Assignee:

VLSI Technology, Inc. - San Jose CA

International Classification:

H01L 2176

US Classification:

438424

Abstract:

An isolation structure on an integrated circuit is formed using a shallow trench isolation process. A layer of buffer oxide is formed on a substrate. A layer of nitride is formed on the layer of buffer oxide. The layer of nitride and the layer of buffer oxide are patterned to form a trench area. An oxidation of the substrate is performed to provide for round corners at a perimeter of the trench area. The substrate is then etched to form a trench within the trench area.

US Patent:

62110454, Apr 3, 2001

Filed:

Nov 30, 1999

Appl. No.:

9/452291

Inventors:

Victor Liang - Milpitas CA
Mark Rubin - San Jose CA
Bijan Moslehi - Stanford CA

Assignee:

VLSI Technology, Inc. - San Jose CA

International Classification:

H01L 214763

US Classification:

438585

Abstract:

A method is presented in which nitrogen-based gas in incorporated in polysilicon gate re-oxidation to improve hot carrier performance. A gate oxide layer is formed. Gate material is deposited on the gate oxide layer. The gate material is etched to form a gate structure. The gate oxide layer and the gate are re-oxidized. During re-oxidation, nitrogen-based gas is introduced to nitridize re-oxidized portions of the gate oxide layer.

US Patent:

20220404830, Dec 22, 2022

Filed:

Apr 18, 2022

Appl. No.:

17/722522

Inventors:

- Redwood City CA, US
Jeffrey Robert DeCew - San Francisco CA, US
Matthew Joseph Donahoe - Redwood City CA, US
Mark Edward Rubin - San Jose CA, US
Adam Parker Bry - Redwood City CA, US
Abraham Galton Bachrach - Emerald Hills CA, US
Jack Louis Zhu - San Mateo CA, US
Kristen Marie Holtz - Menlo Park CA, US

Assignee:

Skydio, Inc. - Redwood City CA

International Classification:

G05D 1/00
B64D 47/08
B64C 39/02
G06F 9/54
G06N 20/00
G06F 8/20

Abstract:

A technique is described for developing and using applications and skills with an autonomous vehicle. In an example embodiment, a development platform is provided that enables access to a developer console for developing software modules for use with an autonomous vehicle. Using the developer console, a developer user can specify instructions for causing an autonomous vehicle to perform one or more operations. For example, to control the behavior of an autonomous vehicle, the instructions can cause an executing computer system at the autonomous vehicle to generate calls to an application programming interface (API) associated with an autonomous navigation system of autonomous vehicle. Such calls to the API can be configured to adjust a parameter of a behavioral objective associated with a trajectory generation process performed by the autonomous navigation system that controls the behavior of the autonomous vehicle. The instructions specified by the developer can be packaged as a software module that can be deployed for use at autonomous vehicle.

US Patent:

20200073385, Mar 5, 2020

Filed:

Sep 3, 2019

Appl. No.:

16/559512

Inventors:

- Redwood City CA, US
Jeffrey Robert DeCew - San Francisco CA, US
Matthew Joseph Donahoe - Redwood City CA, US
Mark Edward Rubin - San Jose CA, US
Adam Parker Bry - Redwood City CA, US
Abraham Galton Bachrach - Redwood City CA, US
Jack Louis Zhu - Redwood City CA, US
Kristen Marie Holtz - Redwood City CA, US

International Classification:

G05D 1/00
B64D 47/08
B64C 39/02
G06F 8/20
G06F 9/54
G06N 20/00

Abstract:

A technique is described for developing and using applications and skills with an autonomous vehicle. In an example embodiment, a development platform is provided that enables access to a developer console for developing software modules for use with an autonomous vehicle. Using the developer console, a developer user can specify instructions for causing an autonomous vehicle to perform one or more operations. For example, to control the behavior of an autonomous vehicle, the instructions can cause an executing computer system at the autonomous vehicle to generate calls to an application programming interface (API) associated with an autonomous navigation system of autonomous vehicle. Such calls to the API can be configured to adjust a parameter of a behavioral objective associated with a trajectory generation process performed by the autonomous navigation system that controls the behavior of the autonomous vehicle. The instructions specified by the developer can be packaged as a software module that can be deployed for use at autonomous vehicle.