Mark Joseph Sowa

US Patent:

20170194204, Jul 6, 2017

Filed:

Aug 27, 2014

Appl. No.:

15/323805

Inventors:

- San Jose CA, US
Mark Sowa - Medford MA, US

Assignee:

Ultratech, Inc. - San Jose CA

International Classification:

H01L 21/768
H01L 21/285
H01L 23/528
H01L 23/48
H01L 23/532

Abstract:

Through via holes are prepared for metallization using ALD and PEALD processing. Each via is coated with a titanium nitride barrier layer having a thickness ranging from 20 to 200 Å. A ruthenium sealing layer is formed over the titanium nitride barrier layer wherein the sealing layer is formed without oxygen to prevent oxidation of the titanium nitride barrier layer. A ruthenium nucleation layer is formed over the sealing layer wherein the nucleation layer is formed with oxygen in order to oxidize carbon during the application of the Ru nucleation layer. The sealing layer is formed by a PEALD method using plasma excited nitrogen radicals instead of oxygen.

US Patent:

20160064208, Mar 3, 2016

Filed:

Jun 19, 2015

Appl. No.:

14/744409

Inventors:

- San Jose CA, US
Mark J. Sowa - Medford MA, US

Assignee:

ULTRATECH, INC. - San Jose CA

International Classification:

H01L 21/02

Abstract:

A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CFand O, wherein the CFis present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CFpresent in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed.