Martin Cruz Garcia

Address:

111 Nursery Ln, Ft Worth, TX 76114

VIN:

3GNFC16087G311977

Make:

CHEVROLET

Model:

SUBURBAN

Year:

2007

US Patent:

20050036855, Feb 17, 2005

Filed:

Aug 13, 2003

Appl. No.:

10/640121

Inventors:

Martin Garcia - Allen TX, US

International Classification:

B65G049/07

US Classification:

414217000

Abstract:

According to one embodiment of the invention, a system for handling semiconductor wafers includes a chamber, a robot associated with the chamber, and a robot blade generally horizontally disposed within the chamber and coupled to the robot at a first end. The robot blade includes a second end distal the first end, in which the second end has a plan view profile that forms a continuously curved surface.

US Patent:

20220359727, Nov 10, 2022

Filed:

May 10, 2021

Appl. No.:

17/316091

Inventors:

- Austin TX, US
Rodney Arlan Barksdale - Buda TX, US
Stephen C. Chew - Dripping Springs TX, US
Martin Garcia - Buda TX, US
Wayne Geoffrey Risner - Austin TX, US

International Classification:

H01L 29/66
H01L 29/78
H01L 29/40
H01L 29/08

Abstract:

A method for manufacturing a Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor with implant alignment spacers includes etching a gate stack comprising a first nitride layer. The first nitride layer is on a silicon layer. The gate stack is separated from a substrate by a first oxide layer. The gate stack is oxidized to form a polysilicon layer from the silicon layer, and to form a second oxide layer on a sidewall of the polysilicon layer. A drain region of the LDMOS transistor is implanted with a first implant aligned to a first edge formed by the second oxide layer. A second nitride layer is formed conformingly covering the second oxide layer. A nitride etch-stop layer is formed conformingly covering the second nitride layer.