Martin J Wang

US Patent:

7176025, Feb 13, 2007

Filed:

Mar 11, 2003

Appl. No.:

10/386623

Inventors:

Nurith Kurn - Palo Alto CA, US
Martin Junhong Wang - Foster City CA, US

Assignee:

Nugen Technologies, Inc. - San Carlos CA

International Classification:

C12N 15/00
C12Q 1/68
C07H 21/02
C07H 21/04

US Classification:

435440, 435 6, 536 231, 536 243

Abstract:

Methods of recombining nucleic acids are provided. In particular, methods for the production of partially double stranded nucleic acids comprising a 3′ overhang from an RNA target and use in methods of recombining polynucleotides is described. These methods do not require thermocycling. The present invention also provides methods of recombining and selection which allow for identification of proteins comprising improved or desired characteristics.

US Patent:

49238221, May 8, 1990

Filed:

May 22, 1989

Appl. No.:

7/356021

Inventors:

Martin S. Wang - Fremont CA
Kuang-Yi Chiu - Los Altos Hills CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H01L 21265

US Classification:

437 41

Abstract:

A method of fabricating a semiconductor device in an integrated circuit. A conductive titanium layer is deposited on a substrate in which source, drain and gate regions have been created. A titanium nitride layer is applied as a cap over the titanium layer. A first anneal at a relatively low temperature is performed, causing portions of the titanium which are adjacent the silicon surface to form a titanium-silicon compound and causing the remaining titanium and titanium nitride to form a nitride coating. This nitride coating is etched away and a final high-temperature anneal is performed, resulting in thick, smooth titanium silicide (TiSi. sub. 2) layers on the source and drain regions and gate pads.