Matthew E Colburn

US Patent:

6641899, Nov 4, 2003

Filed:

Nov 5, 2002

Appl. No.:

10/287935

Inventors:

Matthew E Colburn - Hopewell Junction NY
Stephen M Gates - Ossining NY
Jeffrey C Hedrick - Montvale NJ
Elbert Huang - Tarrytown NY
Satyanarayana V Nitta - Poughquag NY
Sampath Purushothaman - Yorktown Heights NY
Muthumanickam Sankarapandian - Yorktown Heights NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 300

US Classification:

428209, 428210, 428195, 427503, 427504, 427510, 427515

Abstract:

A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method.

US Patent:

6719915, Apr 13, 2004

Filed:

Jul 19, 2001

Appl. No.:

09/908765

Inventors:

Carlton Grant Willson - Austin TX
Matthew Earl Colburn - Waukesha WI

Assignee:

Board of Regents, The University of Texas System - Austin TX

International Classification:

B44C 122

US Classification:

216 44, 216 52, 216 67, 216 72

Abstract:

A method of forming a relief image in a structure comprising a substrate and a transfer layer formed thereon comprises covering the transfer layer with a polymerizable fluid composition, and then contacting the polymerizable fluid composition with a mold having a relief structure formed therein such that the polymerizable fluid composition fills the relief structure in the mold. The polymerizable fluid composition is subjected to conditions to polymerize polymerizable fluid composition and form a solidified polymeric material therefrom on the transfer layer. The mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material; and the transfer layer and the solidified polymeric material are subjected to an environment to selectively etch the transfer layer relative to the solidified polymeric material such that a relief image is formed in the transfer layer.

US Patent:

6842229, Jan 11, 2005

Filed:

Dec 29, 2003

Appl. No.:

10/747795

Inventors:

Sidlgata V. Sreenivasan - Austin TX, US
Byung J. Choi - Round Rock TX, US
Matthew Colburn - Hopewell Junction NY, US
Todd Bailey - Fishkill NY, US

Assignee:

Board of Regents, The University of Texas System - Austin TX

International Classification:

G03B 2762
G03B 2758

US Classification:

355 75, 355 72

Abstract:

A system of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.

US Patent:

6902853, Jun 7, 2005

Filed:

May 11, 2004

Appl. No.:

10/843195

Inventors:

Sidlgata V. Sreenivasan - Austin TX, US
Byung J. Choi - Round Rock TX, US
Matthew Colburn - Hopewell Junction NY, US
Todd Bailey - Fishkill NY, US

Assignee:

Board of Regents, The University of Texas System - Austin TX

International Classification:

G03F009/00
G03B027/42

US Classification:

430 22, 430 30, 356399, 356400, 356401

Abstract:

The present invention includes a method of determining a relative position of a substrate and a template spaced-apart therefrom, the substrate having substrate alignment marks disposed thereon and the template having template alignment marks disposed thereon, the method including, impinging first and second fluxes of light upon the substrate and template alignment marks, with the substrate and template alignment marks being responsive to the first flux of light defining a first response, and being responsive to the second flux of light defining a second response differing from the first response; and processing the first and second responses to form a focused image of the substrate and template alignment marks on a common plane, with the focused image indicating the relative position of the substrate and the template.

US Patent:

6911400, Jun 28, 2005

Filed:

Nov 5, 2002

Appl. No.:

10/287905

Inventors:

Matthew E Colburn - Hopewell Junction NY, US
Stephen M Gates - Ossining NY, US
Jeffrey C Hedrick - Montvale NJ, US
Elbert Huang - Tarrytown NY, US
Satyanarayana V Nitta - Poughquag NY, US
Sampath Purushothaman - Yorktown Heights NY, US
Muthumanickam Sankarapandian - Yorktown Heights NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/31
H01L021/469
B32B003/00

US Classification:

438758, 438762, 438765, 4281951

Abstract:

A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method.

US Patent:

6916585, Jul 12, 2005

Filed:

May 27, 2003

Appl. No.:

10/446192

Inventors:

Sidlgata V. Sreenivasan - Austin TX, US
Byung J. Choi - Round Rock TX, US
Matthew Colburn - Austin TX, US
Todd Bailey - Austin TX, US

Assignee:

Board of Regents, The University of Texas Systems - Austin TX

International Classification:

G03F009/00
G03C005/00

US Classification:

430 22, 430 30, 430322

Abstract:

A method of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.

US Patent:

6921615, Jul 26, 2005

Filed:

Jul 16, 2001

Appl. No.:

09/907512

Inventors:

Sidlgata V. Sreenivasan - Austin TX, US
Byung J. Choi - Round Rock TX, US
Matthew Colburn - Danbury CT, US
Todd Bailey - Austin TX, US

Assignee:

Board of Regents, The University of Texas System - Austin TX

International Classification:

G03C005/00
G03F009/00

US Classification:

430 22, 430 30, 430322

Abstract:

A method of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.

US Patent:

6930034, Aug 16, 2005

Filed:

Dec 27, 2002

Appl. No.:

10/331038

Inventors:

Matthew E. Colburn - Hopewell Junction NY, US
Elbert E. Huang - Tarrytown NY, US
Satyanarayana V. Nitta - Poughquag NY, US
Sampath Purushothaman - Yorktown Heights NY, US
Katherine L. Saenger - Ossining NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/4763

US Classification:

438619, 438637

Abstract:

A method for fabricating low k and ultra-low k multilayer interconnect structures on a substrate includes: a set of interconnects separated laterally by air gaps; forming a support layer in the via level of a dual damascene structure that is only under the metal line; removing a sacrificial dielectric through a perforated bridge layer that connects the top surfaces of the interconnects laterally; performing multilevel extraction of a sacrificial layer; sealing the bridge in a controlled manner; and decreasing the effective dielectric constant of a membrane by perforating it using sub-optical lithography patterning techniques.