Matthew Davis

US Patent:

6410889, Jun 25, 2002

Filed:

Sep 21, 2001

Appl. No.:

09/961152

Inventors:

Matthew F. Davis - Brookdale CA
Douglas R. McAllister - Pleasanton CA
David Evans - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27D 1100

US Classification:

219390, 219405, 392416, 48724, 438758, 432241

Abstract:

A method and apparatus for heating a loadlock to inhibit the formation of contaminants within the loadlock. At least one heater is attached to the walls of the loadlock to boil contaminants from the surfaces within the loadlock. These desorbed contaminants are exhausted from the loadlock by a vacuum pump. Alternatively, a purge gas can be supplied to the loadlock while the loadlock is being heated. The flow of purge gas flushes the desorbed contaminants from the loadlock.

US Patent:

6485254, Nov 26, 2002

Filed:

Oct 19, 2000

Appl. No.:

09/692902

Inventors:

Matthew Fenton Davis - Brookdale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F04D 1904

US Classification:

415 9, 415 90, 285225

Abstract:

An apparatus and method for coupling a device to a semiconductor processing chamber is provided. The apparatus generally comprises a first ring disposed proximate a second ring. An energy dissipating media is disposed between the first and second rings. Upon the application of a torsional force in excess of a predetermined amount, the first ring rotates relative to the second ring. The energy dissipating media absorbs or dissipates some or all the energy applied to the first and second rings.

US Patent:

6685799, Feb 3, 2004

Filed:

Mar 14, 2001

Appl. No.:

09/808649

Inventors:

Matthew F. Davis - Brookdale CA
Frank Hooshdaran - Pleasanton CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

15634548, 118723 I

Abstract:

A Faraday shield for use with a plasma reactor has a variable shielding efficiency. The shield is divided into numerous shield segments that may each be selectively grounded or ungrounded. The rate of transition between fully ungrounded and fully grounded states is controllable so as to maintain stable plasma conditions in the plasma reactor during the transitional period. The time rate of change of the shielding efficiency can be controlled at a predetermined rate once plasma strike is achieved, or can be made conditional to successful matching at the previous shield setting. When the Faraday shield is fully grounded, the amount of on-wafer and on-chamber contamination is reduced by reducing the rate of sputtering of chamber surfaces.

US Patent:

7158221, Jan 2, 2007

Filed:

Dec 23, 2003

Appl. No.:

10/744711

Inventors:

Matthew F. Davis - Brookdale CA, US
Lei Lian - Santa Clara CA, US
Yasuhiro Uo - Chiba, JP
Michael D. Willwerth - Campbell CA, US
Andrei Ivanovich Netchitaliouk - Visaginas, LT

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01N 21/00

US Classification:

356 72, 356326

Abstract:

A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.

US Patent:

7169625, Jan 30, 2007

Filed:

Jul 25, 2003

Appl. No.:

10/628001

Inventors:

Matthew F. Davis - Brookdale CA, US
Lei Lian - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438 9, 257E21528

Abstract:

A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes so as to generate steady principal components and transitional principal components; and these principal components are compared to reference principal components associated with a reference chamber. The process used for calibration includes a regular plasma process followed by a process perturbation of one process parameter. Similar process perturbation runs are conducted several times to include different perturbation parameters. By performing inner products of the principal components of chamber under study and the reference chamber, matching scores can be reached. Automatic chamber matching can be determined by comparing these scores with preset control limits.

US Patent:

7306696, Dec 11, 2007

Filed:

Nov 1, 2002

Appl. No.:

10/286402

Inventors:

Lei Lian - Santa Clara CA, US
Matthew F. Davis - Brookdale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/3065
C23C 16/00
C23C 14/00

US Classification:

15634525, 15634524, 438 7, 438 14, 438710, 20419233, 20429832

Abstract:

In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

US Patent:

7330244, Feb 12, 2008

Filed:

Dec 28, 2006

Appl. No.:

11/617221

Inventors:

Matthew F. Davis - Brookdale CA, US
Lei Lian - Santa Clara CA, US
Yasuhiro Uo - Chiba, JP
Michael D. Willwerth - Campbell CA, US
Andrei Ivanovich Netchitaliouk - Visaginas LT, LT

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01N 21/00

US Classification:

356 72

Abstract:

A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.

US Patent:

7374696, May 20, 2008

Filed:

Feb 11, 2004

Appl. No.:

10/777026

Inventors:

Mark N. Kawaguchi - Mountain View CA, US
James S. Papanu - San Rafael CA, US
Scott Williams - Sunnyvale CA, US
Matthew Fenton Davis - Brookdale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B44C 1/22

US Classification:

216 67, 216 68, 216 69, 216 73, 438715

Abstract:

The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.