Matthew T King

US Patent:

20200303536, Sep 24, 2020

Filed:

Mar 21, 2019

Appl. No.:

16/360828

Inventors:

JOSEPHINE BEA CHANG - Ellicott City MD, US
ROBERT S. HOWELL - Silver Spring MD, US
MATTHEW R. KING - Wake Forest NC, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/778
H01L 29/15
H01L 29/08
H01L 29/66
H01L 21/02

Abstract:

A vertical transistor is provided that includes a base structure and a superlattice structure overlying the base structure. The superlattice structure comprises a multichannel ridge having sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge. The vertical transistor also includes a source region that overlies the base structure and is in contact with a first end of the superlattice structure, a floating drain that overlies the base structure and is in contact with a second end of the superlattice structure, and a drain. When the vertical transistor is in an ‘ON’ state, current flows from the source region through the channels of the multichannel ridge to the floating drain, which funnels the current to the drain through at least a portion of the base structure.

US Patent:

20200013775, Jan 9, 2020

Filed:

Sep 20, 2019

Appl. No.:

16/577629

Inventors:

JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
BETTINA NECHAY - LAUREL MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
SHALINI GUPTA - Baltimore MD, US
RONALD G. FREITAG - Catonsville MD, US
KAREN MARIE RENALDO - Pasadena CA, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 27/088
H01L 21/8252
H01L 21/308

Abstract:

A method of forming an integrated circuit can include forming a heterostructure over a substrate structure, wherein the given substrate structure comprises a given semiconductor material. The method can include etching a castellated channel region in an e-mode device area of the heterostructure that defines a plurality of ridge channels interleaved between a plurality of trenches, the ridge channels comprising another semiconductor material. The method can also include forming an isolation region on the heterostructure to electrically isolate the e-mode device area from a d-mode device area of the heterostructure. The method can further include forming a mask with an opening that defines a castellated gate opening overlying the castellated channel region and the mask defines an opening overlaying a single planar gate overlying the d-mode device area of the heterostructure. The method can also include performing a contact fill with conductive material to form a castellated gate contact.

US Patent:

20170288045, Oct 5, 2017

Filed:

Jun 15, 2017

Appl. No.:

15/624445

Inventors:

BETTINA A. NECHAY - LAIREI MD, US
SHALINI GUPTA - FALLS CHURCH VA, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/778
H01L 29/66
H01L 29/205
H01L 29/15
H01L 29/20

Abstract:

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

US Patent:

20160336425, Nov 17, 2016

Filed:

Jul 28, 2016

Appl. No.:

15/222039

Inventors:

BETTINA A. NECHAY - LAIREI MD, US
SHALINI GUPTA - FALLS CHURCH VA, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/66
H01L 29/205
H01L 21/3065
H01L 29/10

Abstract:

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

US Patent:

20160190267, Jun 30, 2016

Filed:

Mar 9, 2016

Appl. No.:

15/065298

Inventors:

ERIC J. STEWART - SILVER SPRING MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
BETTINA NECHAY - LAUREL MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/423
H01L 29/20
H01L 29/778
H01L 29/06

Abstract:

A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region and overlying the base structure and being spaced apart from the first pillar by a device region. A bridge is disposed in the device region with a first end connected to the first pillar and a second end connected to the second pillar. The bridge includes a top, sides, and a bottom. The bridge is formed from one or more heterostructures with an undercut opening extending from the bottom to an underlying structure. A four-sided conductive contact wraps around and substantially surrounds the bridge around its top, its sides, and its bottom along at least a portion of its length between the first and second end.

US Patent:

20160126340, May 5, 2016

Filed:

Nov 5, 2014

Appl. No.:

14/533752

Inventors:

BETTINA A. NECHAY - LAIREI MD, US
SHALINI GUPTA - FALLS CHURCH VA, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/778
H01L 29/10
H01L 29/66

Abstract:

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

US Patent:

20160104703, Apr 14, 2016

Filed:

Oct 8, 2014

Appl. No.:

14/509750

Inventors:

JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
BETTINA NECHAY - LAUREL MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
SHALINI GUPTA - FALLS CHURCH VA, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 27/088
H01L 29/201
H01L 29/205
H01L 29/06
H01L 21/02
H01L 21/8236
H01L 21/306
H01L 21/8234
H01L 21/308
H01L 29/20
H01L 21/8252

Abstract:

A circuit is provided that includes a castellated channel device that comprises a heterostructure overlying a substrate structure, a castellated channel device area formed in the heterostructure that defines a plurality of ridge channels interleaved between a plurality of trenches, and a three-sided castellated conductive gate contact that extends across the castellated channel device area. The three-sided gate contact substantially surrounds each ridge channel around their tops and their sides to overlap a channel interface of heterostructure of each of the plurality of ridge channels. The three-sided castellated conductive gate contact extends along at least a portion of a length of each ridge channel.

US Patent:

20160079019, Mar 17, 2016

Filed:

Sep 12, 2014

Appl. No.:

14/485211

Inventors:

PAVEL BORODULIN - Baltimore MD, US
Nabil Abdel-Meguid EL-HINNAWY - Columbia MD, US
Robert Miles YOUNG - Ellicott City MD, US
Matthew Russell KING - Linthicum MD, US
Michael J. LEE - Linthicum MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - Falls Church VA

International Classification:

H01H 37/46

Abstract:

One embodiment of the invention includes a phase-change material switch. The switch includes a first terminal that receives an input signal and a second terminal. The switch includes an actuation portion that receives a control signal in one of a first state to emit a first heat profile and a second state to emit a second heat profile. The switch further includes a switch portion comprising a phase-change material arranged as a plurality of longitudinal strips that each interconnect the first terminal and the second terminal and that are each in proximity with the actuation portion. The phase-change material can be selectable between a conducting state in response to the first heat profile to conduct an input signal from the first terminal to the second terminal and a blocking state in response to the second heat profile to block the input signal from the first terminal to the second terminal.