May P Wang

US Patent:

6664202, Dec 16, 2003

Filed:

Apr 18, 2002

Appl. No.:

10/126495

Inventors:

Sum-Yee Tang - San Jose CA
May Yuxiang Wang - Palo Alto CA
Lester A. DCruz - San Jose CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438791

Abstract:

A mixed-frequency, high temperature PECVD process is utilized to create a high quality silicon nitride layer having highly conformal properties. Deposition in an ammonia rich ambient at high temperature reduces microloading between dense and isolated features by improving surface mobility of precursors. High quality nitride films formed by the instant process are particularly suited for front-end applications such as the formation of spacer structures and the formation of contact etch stop layers.