Mei Wu Zhu from San Leandro, CA, age 55

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Specialties:

Family Medicine

Work:

Cleveland ClinicRichard E Jacobs Health Center
33100 Cleveland Clinic Blvd, Avon, OH 44011
(440)6954000 (phone), (440)8995542 (fax)

Languages:

English

Description:

Ms. Zhu works in Avon, OH and specializes in Family Medicine. Ms. Zhu is affiliated with Cleveland Clinic.

Electrochemical Methods For Polishing Copper Films On Semiconductor Substrates
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US Patent:

6402592, Jun 11, 2002
Filed:

Jan 17, 2001
Appl. No.:

09/761327
Inventors:

Mei Zhu - San Jose CA
Igor Ivanov - Measanton CA
Chiu H. Ting - Saratoga CA
Assignee:

Steag Cutek Systems, Inc. - San Jose CA
International Classification:

B24B 100
US Classification:

451 36, 451 41, 451907, 451908
Abstract:

Methods for electrochemically polishing copper films on semiconductor substrates use an alkaline solution with a pH in the range of about 8. 0 to 10. 5. A constant current density of from 5 to 100 amperes per square foot is applied to an electrochemical cell formed by an electrode, the alkaline solution and the copper film. Copper is removed at a rate of from 500 to 10,000 angstroms per minute. The end point for the electro-polishing is detected by a sudden change in applied voltage. The alkaline polishing solution may also contain copper ions so that when the current direction is reversed, copper is deposited onto the copper film. Furthermore, this copper deposition will occur selectively on the exposed copper surface but not on the exposed barrier layer surface. Hence, the method can compensate for dishing and erosion by re-depositing copper in regions after too much copper was removed from those regions.

Alkaline Copper Plating
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US Patent:

6664633, Dec 16, 2003
Filed:

Sep 10, 2001
Appl. No.:

09/950008
Inventors:

Mei Zhu - San Jose CA
Assignee:

LSI Logic Corporation - Milpitas CA
International Classification:

H01L 23485
US Classification:

257751, 205170, 205184, 205157, 205102, 205123, 438584
Abstract:

A method for depositing a metal conduction layer in a feature of a substrate is provided. The method includes forming the feature in the substrate, the feature having a width dimension of less than about a tenth of a micron. A barrier layer is deposited on the substrate, preferably using a self ionized plasma deposition process, where the barrier layer has a thickness of no more than about three hundred angstroms. A substantially continuous seed layer is deposited on the barrier layer, where the seed layer has a thickness of less than about three hundred angstroms. A conduction layer is deposited on the seed layer from an alkaline electroplating bath, where the electroplating bath contains an electroplating solution selected from the group consisting a pyrophosphate solution, an alkaline cyanide solution and an alkaline metal ion complexing solution. The process is adaptable to electroplating features on a substrate wherein the features have a width dimension of less than about one tenth of a micron.

High Frequency Electrochemical Deposition
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US Patent:

6736953, May 18, 2004
Filed:

Sep 28, 2001
Appl. No.:

09/966651
Inventors:

Mei Zhu - San Jose CA
Zhihai Wang - Sunnyvale CA
Assignee:

LSI Logic Corporation - Milpitas CA
International Classification:

C25D 518
US Classification:

205103, 205105, 205157, 205118, 205123
Abstract:

A method of forming an electrically conductive structure on a substrate. An electrically conductive electrode layer is formed on the substrate, and an electrically conductive conduction layer is formed over the electrode layer. The conduction layer is formed by placing the substrate in a plating solution. A first current is applied to the substrate at a first bias and a first density for a first duration. A second current is applied to the substrate at a second bias and a second density for a second duration. The first current and the second current are cyclically applied at a frequency of between about thirty hertz and about one hundred and thirty hertz.

Electro Chemical Mechanical Polishing Method
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US Patent:

6858531, Feb 22, 2005
Filed:

Jul 12, 2002
Appl. No.:

10/195044
Inventors:

Mei Zhu - San Jose CA, US
Wilbur G. Catabay - Saratoga CA, US
Assignee:

LSI Logic Corporation - Milpitas CA
International Classification:

H01L021/4763
US Classification:

438633, 438645, 438692, 438693
Abstract:

Embodiments of the invention include a method for electro chemical mechanical polishing of a substrate. The process includes flowing an electro chemical mechanical polishing (ECMP) slurry having a high viscosity with a polishing agent over a portion of the substrate. Electrical current is passed through the slurry and substrate. The electrical current, in conjunction with the abrading action of the slurry as it flows over the surface of the substrate, serves to remove at least a portion of the metal layer from the substrate. The invention also includes various slurry embodiments.

Electro Chemical Mechanical Polishing Method And Device For Planarizing Semiconductor Surfaces
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US Patent:

7285145, Oct 23, 2007
Filed:

Dec 7, 2004
Appl. No.:

11/007694
Inventors:

Mei Zhu - San Jose CA, US
Wilbur G. Catabay - Saratoga CA, US
Assignee:

LSI Corporation - Milpitas CA
International Classification:

B24D 3/02
C09C 1/68
C09K 3/14
US Classification:

51307, 51308, 51309, 438691, 438693
Abstract:

Embodiments of the invention include a method for electro chemical mechanical polishing of a substrate. The process includes flowing an electro chemical mechanical polishing (ECMP) slurry having a high viscosity with a polishing agent over a portion of the substrate. Electrical current is passed through the slurry and substrate. The electrical current, in conjunction with the abrading action of the slurry as it flows over the surface of the substrate, serves to remove at least a portion of the metal layer from the substrate. The invention also includes various slurry embodiments.