Mei Zhu

Address:

14763 SE Marci Way, Clackamas, OR 97015

VIN:

JTJBT20X370126885

Make:

LEXUS

Model:

GX 470

Year:

2007

US Patent:

6402592, Jun 11, 2002

Filed:

Jan 17, 2001

Appl. No.:

09/761327

Inventors:

Mei Zhu - San Jose CA
Igor Ivanov - Measanton CA
Chiu H. Ting - Saratoga CA

Assignee:

Steag Cutek Systems, Inc. - San Jose CA

International Classification:

B24B 100

US Classification:

451 36, 451 41, 451907, 451908

Abstract:

Methods for electrochemically polishing copper films on semiconductor substrates use an alkaline solution with a pH in the range of about 8. 0 to 10. 5. A constant current density of from 5 to 100 amperes per square foot is applied to an electrochemical cell formed by an electrode, the alkaline solution and the copper film. Copper is removed at a rate of from 500 to 10,000 angstroms per minute. The end point for the electro-polishing is detected by a sudden change in applied voltage. The alkaline polishing solution may also contain copper ions so that when the current direction is reversed, copper is deposited onto the copper film. Furthermore, this copper deposition will occur selectively on the exposed copper surface but not on the exposed barrier layer surface. Hence, the method can compensate for dishing and erosion by re-depositing copper in regions after too much copper was removed from those regions.

US Patent:

6664633, Dec 16, 2003

Filed:

Sep 10, 2001

Appl. No.:

09/950008

Inventors:

Mei Zhu - San Jose CA

Assignee:

LSI Logic Corporation - Milpitas CA

International Classification:

H01L 23485

US Classification:

257751, 205170, 205184, 205157, 205102, 205123, 438584

Abstract:

A method for depositing a metal conduction layer in a feature of a substrate is provided. The method includes forming the feature in the substrate, the feature having a width dimension of less than about a tenth of a micron. A barrier layer is deposited on the substrate, preferably using a self ionized plasma deposition process, where the barrier layer has a thickness of no more than about three hundred angstroms. A substantially continuous seed layer is deposited on the barrier layer, where the seed layer has a thickness of less than about three hundred angstroms. A conduction layer is deposited on the seed layer from an alkaline electroplating bath, where the electroplating bath contains an electroplating solution selected from the group consisting a pyrophosphate solution, an alkaline cyanide solution and an alkaline metal ion complexing solution. The process is adaptable to electroplating features on a substrate wherein the features have a width dimension of less than about one tenth of a micron.

US Patent:

6736953, May 18, 2004

Filed:

Sep 28, 2001

Appl. No.:

09/966651

Inventors:

Mei Zhu - San Jose CA
Zhihai Wang - Sunnyvale CA

Assignee:

LSI Logic Corporation - Milpitas CA

International Classification:

C25D 518

US Classification:

205103, 205105, 205157, 205118, 205123

Abstract:

A method of forming an electrically conductive structure on a substrate. An electrically conductive electrode layer is formed on the substrate, and an electrically conductive conduction layer is formed over the electrode layer. The conduction layer is formed by placing the substrate in a plating solution. A first current is applied to the substrate at a first bias and a first density for a first duration. A second current is applied to the substrate at a second bias and a second density for a second duration. The first current and the second current are cyclically applied at a frequency of between about thirty hertz and about one hundred and thirty hertz.

US Patent:

6858531, Feb 22, 2005

Filed:

Jul 12, 2002

Appl. No.:

10/195044

Inventors:

Mei Zhu - San Jose CA, US
Wilbur G. Catabay - Saratoga CA, US

Assignee:

LSI Logic Corporation - Milpitas CA

International Classification:

H01L021/4763

US Classification:

438633, 438645, 438692, 438693

Abstract:

Embodiments of the invention include a method for electro chemical mechanical polishing of a substrate. The process includes flowing an electro chemical mechanical polishing (ECMP) slurry having a high viscosity with a polishing agent over a portion of the substrate. Electrical current is passed through the slurry and substrate. The electrical current, in conjunction with the abrading action of the slurry as it flows over the surface of the substrate, serves to remove at least a portion of the metal layer from the substrate. The invention also includes various slurry embodiments.

US Patent:

7285145, Oct 23, 2007

Filed:

Dec 7, 2004

Appl. No.:

11/007694

Inventors:

Mei Zhu - San Jose CA, US
Wilbur G. Catabay - Saratoga CA, US

Assignee:

LSI Corporation - Milpitas CA

International Classification:

B24D 3/02
C09C 1/68
C09K 3/14

US Classification:

51307, 51308, 51309, 438691, 438693

Abstract:

Embodiments of the invention include a method for electro chemical mechanical polishing of a substrate. The process includes flowing an electro chemical mechanical polishing (ECMP) slurry having a high viscosity with a polishing agent over a portion of the substrate. Electrical current is passed through the slurry and substrate. The electrical current, in conjunction with the abrading action of the slurry as it flows over the surface of the substrate, serves to remove at least a portion of the metal layer from the substrate. The invention also includes various slurry embodiments.