Michael Delucia

US Patent:

20190385811, Dec 19, 2019

Filed:

Aug 29, 2019

Appl. No.:

16/554893

Inventors:

- Gloucester MA, US
Jun Lu - Beverly MA, US
Frank Sinclair - Boston MA, US
Eric D. Hermanson - Georgetown MA, US
Joseph E. Pierro - Danvers MA, US
Michael D. Johnson - Peabody MA, US
Michael S. DeLucia - Gloucester MA, US
Antonella Cucchetti - Manchester-by-the-Sea MA, US

International Classification:

H01J 37/317
H01J 1/50
H01J 27/08

Abstract:

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

US Patent:

20180211808, Jul 26, 2018

Filed:

Mar 27, 2018

Appl. No.:

15/936966

Inventors:

- Gloucester MA, US
Jun Lu - Beverly MA, US
Frank Sinclair - Boston MA, US
Eric D. Hermanson - Georgetown MA, US
Joseph E. Pierro - Danvers MA, US
Michael D. Johnson - Peabody MA, US
Michael S. DeLucia - Gloucester MA, US
Antonella Cucchetti - Manchester-by-the-Sea MA, US

International Classification:

H01J 27/20
H01J 37/317
H01J 27/02
H01J 1/50
H01J 27/08

Abstract:

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.