Michael D Field

US Patent:

7368021, May 6, 2008

Filed:

Feb 22, 2005

Appl. No.:

11/063334

Inventors:

Michael Field - Jersey City NJ, US
Jeff Parrell - Roselle Park NJ, US
Youzhu Zhang - East Brunswick NJ, US
Seungok Hong - New Providence NJ, US

Assignee:

Oxford Superconducting Technology - Carteret NJ

International Classification:

H01L 39/24

US Classification:

148 98, 29599, 29825, 1741251

Abstract:

Critical current densities of internal tin wire to the range of 3000 A/mmat temperature of 4. 2 K and in magnetic field 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt % Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; barrier thickness relative to the filament thickness; additions of a dopant such as Ti or Ta to the NbSn; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage.

US Patent:

7585377, Sep 8, 2009

Filed:

Mar 4, 2008

Appl. No.:

12/074714

Inventors:

Michael Field - Jersey City NJ, US
Jeff Parrell - Roselle Park NJ, US
Youzhu Zhang - East Brunswick NJ, US
Seungok Hong - New Providence NJ, US

Assignee:

Oxford Superconducting Technology - Carteret NJ

International Classification:

H01L 39/04

US Classification:

148 98, 29599, 29825, 1741251

Abstract:

Critical current densities of internal tin wire having values of at least 2000 A/mmat temperature of 4. 2 K and in magnetic field of 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt % Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; and barrier thickness relative to the filament thickness; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage.

US Patent:

20100101076, Apr 29, 2010

Filed:

May 21, 2007

Appl. No.:

12/451589

Inventors:

Jeff Parrell - Roselle Park NJ, US
Boleslaw Czabai - Avenel NJ, US
Youzhu Zhang - East Brunswick NJ, US
Seungok Hong - New Providence NJ, US
Michael Field - Jersey City NJ, US

International Classification:

G01N 3/20
B23P 17/00
G01N 21/88

US Classification:

29605, 73849, 3562371, 73779

Abstract:

A device and method for use as an adjunct in assuring that a manufactured wire is substantially free of internal flaws. A plurality of successively adjacent wire bending stations are provided, where each station includes means for bending the wire into bending planes which are different for each of the stations. The wire is passed through the successive stations, whereby the different bending planes at each station subject the wire at each station to tensile bending strain at portions of the wire cross-section which are different for each station. As a result the probability is increased that a given internal flaw in the wire will be exposed to the tensile bending strain condition as the wire passes through the successive stations, increasing likelihood of breakage of the wire at the flaw or of flaw magnification to improve detection of the flaw during subsequent wire inspections.

US Patent:

20170221608, Aug 3, 2017

Filed:

Jan 25, 2017

Appl. No.:

15/414972

Inventors:

Michael Field - Hoboken NJ, US
Hanping Miao - Edison NJ, US
Carlos Sanabria - Tallahassee FL, US
Jeffrey Parrell - Mountainside NJ, US

International Classification:

H01B 12/04
C22C 9/02
H01B 1/02
C22F 1/18
B21C 1/02
C22C 27/02
C22F 1/08

Abstract:

Methods for producing a multifilament NbSn superconducting wire having a Jc value of at least 2000 A/mmat 4.2 K and 12 T by a) packing a plurality of Cu encased Nb rods within a first matrix which is surrounded by an intervening Nb diffusion barrier and a second matrix on the other side of the barrier remote from the rods thereby forming a packed subelement for the superconducting wire; b) providing a source of Sn within the subelement; c) assembling the metals within the subelement, the relative sizes and ratios of Nb, Cu and Sn being selected such that (i) the Nb fraction of the subelement cross section including and within the diffusion barrier is from 50 to 65% by area; (ii) the atomic ratio of the Nb to Sn including and within the diffusion barrier of the subelement is from 2.7 to 3.7; (iii) the ratio of the Sn to Cu within the diffusion barrier of the subelement is such that the Sn wt %/(Sn wt %+Cu wt %) is 45%-65%; (iv) the Cu to Nb local area ratio (LAR) of the Cu-encased Nb rods is from 0.10 to 0.30; (v) the Nb diffusion barrier being fully or partially converted to NbSn by subsequent heat treatment; and (vi) the thickness of the Nb diffusion barrier is greater than the radius of the Nb portions of the Cu encased Nb rods; and d) assembling the subelements in a further matrix and reducing the assemblage to wire form such that (i) the multifilamentary NbSn superconducting wire is formed of a plurality of the subelements, each having a Nb diffusion barrier to thereby form a wire having a distributed barrier design; (ii) the Nb portions of the copper encased Nb rods in the final wire are of diameter from 0.5 to 7 μm before reaction, and (iii) the Nb diffusion barrier that is fully or partially converted to NbSn by heat treatment is from 0.8 to 11 μm thickness before reaction; and e) heat treating the final size wire from step d) to form the NbSn superconducting phases, and multifilament NbSn superconducting wires made thereby are described herein.