Michael Ray Givens

US Patent:

7026219, Apr 11, 2006

Filed:

Feb 11, 2002

Appl. No.:

10/074722

Inventors:

Christophe F. Pomarede - Phoenix AZ, US
Michael E. Givens - Phoenix AZ, US
Eric J. Shero - Phoenix AZ, US
Michael A. Todd - Phoenix AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

H01L 21/336
H01L 21/20
H01L 21/4763
H01L 21/469

US Classification:

438285, 438508, 438585, 438591, 438785

Abstract:

Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes aid in reducing hydrogen content for a given deposition rate.

US Patent:

7122085, Oct 17, 2006

Filed:

Jul 29, 2003

Appl. No.:

10/629029

Inventors:

Eric J. Shero - Phoenix AZ, US
Michael E. Givens - Phoenix AZ, US
Ryan Schmidt - Mesa AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

C23C 16/448

US Classification:

118726, 34209, 34211, 34215, 34226, 392388, 392389

Abstract:

Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

US Patent:

7790556, Sep 7, 2010

Filed:

Jun 9, 2005

Appl. No.:

11/148721

Inventors:

Christophe F. Pomarede - Phoenix AZ, US
Michael E. Givens - Phoenix AZ, US
Eric J. Shero - Phoenix AZ, US
Michael A. Todd - Phoenix AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

H01L 21/336
H01L 21/3205
H01L 21/4763
H01L 21/763

US Classification:

438285, 438591, 438770, 438785, 438786, 257E21196

Abstract:

Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes, aid in reducing hydrogen content for a given deposition rate.

US Patent:

8047706, Nov 1, 2011

Filed:

Nov 18, 2008

Appl. No.:

12/273440

Inventors:

Matthew G. Goodman - Chandler AZ, US
Mark Hawkins - Gilbert AZ, US
Ravinder Aggarwal - Gilbert AZ, US
Michael Givens - Phoenix AZ, US
Eric Hill - Goodyear AZ, US
Gregory Bartlett - Chandler AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

G01K 15/00

US Classification:

374 1, 374102, 374178, 702 99, 438 14, 32475002

Abstract:

Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

US Patent:

20060216419, Sep 28, 2006

Filed:

May 25, 2006

Appl. No.:

11/442364

Inventors:

Eric Shero - Phoenix AZ, US
Michael Givens - Phoenix AZ, US
Ryan Schmidt - Mesa AZ, US

International Classification:

C23C 16/00

US Classification:

427248100, 427255280

Abstract:

Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

US Patent:

20100107974, May 6, 2010

Filed:

Nov 6, 2008

Appl. No.:

12/266317

Inventors:

Michael Givens - Phoenix AZ, US
Mike Halpin - Scottsdale AZ, US
Matthew G. Goodman - Chandler AZ, US
Keir Kosco - Chandler AZ, US

Assignee:

ASM AMERICA, INC. - Phoenix AZ

International Classification:

B05C 13/02

US Classification:

118500

Abstract:

A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises an interior portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The substrate holder has mass density that varies, preferably in order to compensate for variations in substrate temperature owing to surface geometry variations of the interior portion, so as to provide a more uniform thermal coupling between the substrate and substrate holder. The substrate holder is preferably configured to be spaced further apart from a substrate at the center than at the outer perimeter.

US Patent:

20100116207, May 13, 2010

Filed:

Nov 5, 2009

Appl. No.:

12/613436

Inventors:

Michael Givens - Phoenix AZ, US
Matthew Goodman - Chandler AZ, US
Mark Hawkins - Gilbert AZ, US
Brad Halleck - Salem OR, US
Herbert Terhorst - , NL

Assignee:

ASM AMERICA, INC. - Phoenix AZ

International Classification:

C23C 16/00

US Classification:

118715000

Abstract:

A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile.

US Patent:

20130292807, Nov 7, 2013

Filed:

May 7, 2012

Appl. No.:

13/465340

Inventors:

Petri Raisanen - Gilbert AZ, US
Michael Givens - Phoenix AZ, US
Mohith Verghese - Phoenix AZ, US

Assignee:

ASM IP HOLDINGS B.V. - Almere

International Classification:

H01L 29/51
H01L 21/66
H01L 21/316

US Classification:

257635, 438763, 438 14, 257E21271, 257E2153, 257E29165

Abstract:

Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.