Michael E Goldman

US Patent:

7521499, Apr 21, 2009

Filed:

Sep 27, 2002

Appl. No.:

10/490882

Inventors:

Miriam Rafailovich - Plainview NY, US
Mayu Si - Stony Brook NY, US
Michael Goldman - Lawrence NY, US
Jonathan Sokolov - Plainview NY, US
Benjamin Chu - Setauket NY, US
Shaoming Zhu - Commack NY, US

Assignee:

Research Foundation of State University of New York - Albany NY

International Classification:

C08K 9/06
C08K 3/34

US Classification:

524445, 524113

Abstract:

A composition which includes polymethylmethacrylate and an organoclay functionalized with intercalation agent, wherein said intercalation agent is a reaction product of a polyamine and an alkyl halide in a polar solvent, preferably a dimethyl, ditallow ammonium functionalized monmorillonite clay as shown in (FIG. ).

US Patent:

7631641, Dec 15, 2009

Filed:

Dec 10, 2007

Appl. No.:

11/999970

Inventors:

Michael I. Goldman - Brooklyn NY, US
David A. Goldman - Yorktown Heights NY, US

International Classification:

E04D 13/18

US Classification:

126629, 126595, 126628, 126701, 126569

Abstract:

In a preferred embodiment, an apparatus, including: a highly radiant heat absorbing material placed closely spaced from and generally parallel to an inside surface of a glass panel disposed in a wall or a door so as to form therebetween a plenum, the highly radiant heat absorbing material being at least partially visually clear.

US Patent:

42765927, Jun 30, 1981

Filed:

Jan 19, 1979

Appl. No.:

6/004845

Inventors:

Michael B. Goldman - Belle Mead NJ
George I. Morton - Belle Mead NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H02M 100

US Classification:

363147

Abstract:

A self-biased MOSFET with suitably biased substrate is used as one of the rectifiers in a rectifier circuit for converting a-c power to d-c power for application to a monolithic integrated circuit of which the rectifier circuit is a part. This avoids the parasitic transistor action which would accompany the use of an isolated pn semiconductor junction, which parasitic transistor action undesirably discharges a storage capacitor connected across the output of the rectifier circuit.

US Patent:

40398692, Aug 2, 1977

Filed:

Nov 28, 1975

Appl. No.:

5/636093

Inventors:

Michael Barnett Goldman - Belle Mead NJ
Stanley Joseph Niemiec - Somerville NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2978
H03K 1760
H03K 1730
H03K 3353

US Classification:

307304

Abstract:

A protection circuit for a monolithic integrated circuit in which regions of one conductivity type are formed in a common substrate of complementary conductivity type and in which a first voltage is applied to the substrate to prevent forward conduction through the junctions formed between the regions and the substrate. The protection network includes a control element, responsive to the first voltage, which is connected between a second voltage point and selected regions for coupling the voltage at the second point to the selected regions only in response to the presence of the first voltage. This prevents the junctions formed by the selected regions and the substrate from being forward biased and carrying excessive and/or destructive currents when the first voltage is absent.

US Patent:

40669181, Jan 3, 1978

Filed:

Sep 30, 1976

Appl. No.:

5/728223

Inventors:

Robert Charles Heuner - Bound Brook NJ
Michael Barnett Goldman - Belle Mead NJ
Stanley Joseph Niemiec - Somerville NJ
George Ira Morton - Belle Mead NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H03K 1700

US Classification:

307304

Abstract:

The gate insulator of an IGFET, whose gate is connected to the input terminal of a circuit, is protected by limiting the potential difference between any two circuit terminals. Each input and output terminal of the circuit is connected via protective diodes to the power supply lines of the circuit and a high conductivity, low reverse dynamic impedance, diode is connected between the power supply lines. The reverse voltage across the high conductivity diode is less than that of any other diodes at a given current level, whereby only the high conductivity diode conducts substantial currents in the reverse direction.