Michael W Goodwin

Address:

4490 Eldorado Pkwy APT 2614, McKinney, TX 75070

VIN:

2GCEC130371606485

Make:

CHEVROLET

Model:

SILVERADO 1500

Year:

2007

US Patent:

55833381, Dec 10, 1996

Filed:

Jun 27, 1994

Appl. No.:

8/266396

Inventors:

Michael W. Goodwin - Garland TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 310296
H01L 3109

US Classification:

2503384

Abstract:

A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.

US Patent:

53748417, Dec 20, 1994

Filed:

Jan 11, 1994

Appl. No.:

8/180005

Inventors:

Michael W. Goodwin - Garland TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 29161
H01L 2714
H01L 2920

US Classification:

257442

Abstract:

A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are HgCdTe with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.

US Patent:

57510490, May 12, 1998

Filed:

Sep 14, 1994

Appl. No.:

8/305639

Inventors:

Michael W. Goodwin - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2714
H01L 3100

US Classification:

257440

Abstract:

A two-color infrared detector (50) is provided comprising elements (10, 110, or 210) having one or more diodes (58, 158 and 168) and a metal insulator semiconductor ("MIS") device (56 and 156). The infrared detector (50) may be referred to as a vertically integrated capacitor diode. The diodes comprise regions (12, 14, 16, 112, 114, and 116) of semiconductor materials which are operable to generate electron-hole pairs when struck by infrared radiation (40) having first and second wavelengths. The capacitor (156) includes a gate (24) provided by the MIS device which is operable to generate a potential well in the first semiconductor region (12 and 112) in conjunction with an insulator layer (22) and collect charges generated by the first wavelength of infrared radiation (40). The layers of semiconductor material may be varied to enhance the performance of the resulting infrared detector.

US Patent:

56354070, Jun 3, 1997

Filed:

Sep 20, 1994

Appl. No.:

8/309367

Inventors:

Michael W. Goodwin - Garland TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2714

US Classification:

438 95

Abstract:

A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.

US Patent:

53007778, Apr 5, 1994

Filed:

Mar 26, 1992

Appl. No.:

7/860733

Inventors:

Michael W. Goodwin - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 310296
H01L 310248

US Classification:

2503384

Abstract:

A two color infrared detector (10) is described comprising a heterojunction diode and a metal insulator semiconductor ("MIS") device. The diode comprises first (12) and second (14) semiconductor regions which are operable to generate electron-hole pairs when struck by infrared radiation having first and second wavelengths respectively. The gate (24) of the MIS device is operable to generate a potential well in the first semiconductor region conjunction with an insulator layer (22).