Michael D Kang

US Patent:

7811409, Oct 12, 2010

Filed:

Nov 29, 2007

Appl. No.:

11/987419

Inventors:

Fred D. Egley - Sunnyvale CA, US
Michael S. Kang - San Francisco CA, US
Anthony L. Chen - Pleasanton CA, US
Jack Kuo - Pleasanton CA, US
Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Bruno Morel - Santa Clara CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/00
C23F 1/00
H01L 21/306

US Classification:

15634534, 15634533, 15634535, 118723 ME

Abstract:

Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

US Patent:

8313635, Nov 20, 2012

Filed:

Sep 1, 2010

Appl. No.:

12/873906

Inventors:

Fred D. Egley - Sunnyvale CA, US
Michael S. Kang - San Francisco CA, US
Anthony L. Chen - Pleasanton CA, US
Jack Kuo - Pleasanton CA, US
Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Bruno Morel - Santa Clara CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B23H 3/00

US Classification:

205640, 205660, 205662, 205671, 205674, 205676, 205677, 205680, 205684, 205687, 205702, 205323, 205324, 205332, 205704, 205705, 216 83, 216 96, 216102

Abstract:

Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

US Patent:

8410393, Apr 2, 2013

Filed:

May 24, 2010

Appl. No.:

12/785774

Inventors:

Anthony Ricci - Sunnyvale CA, US
Saurabh Ullal - Union City CA, US
Michael Kang - San Ramon CA, US
Matthew Busche - Santa Clara CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B23K 37/00

US Classification:

21912154, 21912159, 118715, 118728

Abstract:

A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature Tin fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature Tin fluid communication with the supply line and the return line, temperature Tbeing at least 10 C. above temperature T; a pre-cooling unit providing liquid at temperature Tconnected to the inlet and the outlet, temperature Tbeing at least 10 C. below T; a pre-heating unit providing liquid at temperature Tconnected to the inlet and the outlet, temperature Tbeing at least 10 C.

US Patent:

8423886, Apr 16, 2013

Filed:

Sep 2, 2011

Appl. No.:

13/225090

Inventors:

John M. Barrie - Berkeley CA, US
Michael Kang - San Diego CA, US
Luke Chambers - Livermore CA, US
Christian Storm - Richmond CA, US
Steven Golik - Oakland CA, US
John Hartman - Oakland CA, US

Assignee:

iParadigms, LLC. - Oakland CA

International Classification:

G06F 17/00

US Classification:

715230

Abstract:

The present invention relates to systems and methods for the peer review, originality analysis, and contextual mark-up of formatted electronic documents. In particular, the present invention provides systems and methods that utilize layered peer review, originality analysis and contextual markup modules in one view. These systems and methods have many applications, including use for online editing and education.

US Patent:

20050284573, Dec 29, 2005

Filed:

Jun 24, 2004

Appl. No.:

10/874566

Inventors:

Fred Egley - Sunnyvale CA, US
Michael Kang - San Francisco CA, US
Anthony Chen - Pleasanton CA, US
Jack Kuo - Pleasanton CA, US
Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Bruno Morel - Santa Clara CA, US

International Classification:

C23F001/00
B44C001/22

US Classification:

156345330, 216058000, 216037000

Abstract:

Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

US Patent:

20100243164, Sep 30, 2010

Filed:

Mar 26, 2010

Appl. No.:

12/748141

Inventors:

Leonard J. Sharpless - Fremont CA, US
Harmeet Singh - Fremont CA, US
Michael S. Kang - San Ramon CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/306
C23F 1/08
C23C 16/00

US Classification:

15634533, 15634537, 118723 R, 118723 I

Abstract:

A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at an upper end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is defined by a portion of the cylinder between the conical inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface. The thermal choke is defined by a thin metal section having a thickness of less than 0.25 inch and extending at least 25% of the length of the conical inner surface.

US Patent:

20130056022, Mar 7, 2013

Filed:

Oct 31, 2012

Appl. No.:

13/665225

Inventors:

Lam Research Corporation - Fremont CA, US
Michael S. Kang - San Francisco CA, US
Anthony L. Chen - Pleasanton CA, US
Jack Kuo - Pleasanton CA, US
Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Bruno Morel - Santa Clara CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B08B 7/00

US Classification:

134 11

Abstract:

Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

US Patent:

20140217895, Aug 7, 2014

Filed:

Feb 1, 2013

Appl. No.:

13/756986

Inventors:

- Fremont CA, US
Adam Mace - San Jose CA, US
Michael Kang - San Ramon CA, US
Allan Ronne - Santa Clara CA, US

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

H01J 37/32

US Classification:

315117

Abstract:

A temperature controlled dielectric window of an inductively coupled plasma processing chamber includes a dielectric window forming a top wall of the plasma processing chamber having at least first and second channels therein. A liquid circulating system includes a source of cold liquid circulating in a first closed loop which is not in fluid communication with the channels, a source of hot liquid circulating in a second closed loop which is in fluid communication with the channels, and first and second heat exchangers. The cold liquid passes through the first heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the first heat exchanger and then through the inlet of the first channel. The cold liquid passes through the second heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the second heat exchanger and then through the inlet of the second channel.