Michael J Macmillan

US Patent:

20170032965, Feb 2, 2017

Filed:

Oct 17, 2016

Appl. No.:

15/295968

Inventors:

- Lake Forest CA, US
Michael MacMillan - Rancho Santa Margarita CA, US

International Classification:

H01L 21/04
H01L 29/78
H01L 29/16
H01L 29/66
H01L 21/02
H01L 29/51

Abstract:

Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.

US Patent:

20140167073, Jun 19, 2014

Filed:

Dec 18, 2013

Appl. No.:

14/133507

Inventors:

- LAKE FOREST CA, US
Michael MacMillan - Rancho Santa Margarita CA, US

Assignee:

GLOBAL POWER DEVICE COMPANY - Lake Forest CA

International Classification:

H01L 29/51
H01L 29/66
H01L 29/16

US Classification:

257 77, 438478, 438268

Abstract:

Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.