Michael Sean O'Connor

US Patent:

8253171, Aug 28, 2012

Filed:

Aug 16, 2010

Appl. No.:

12/857494

Inventors:

Garo J. Derderian - Manassas VA, US
Michael J. O'Connor - Manassas Park VA, US
Adrian N. Robinson - Haymarket VA, US
Jonathan W. Ward - Fairfax VA, US

Assignee:

Lockheed Martin Corporation - Bethesda MD

International Classification:

H01L 27/118

US Classification:

257204, 257E27007

Abstract:

A two terminal switching device includes a first conductive terminal, a second conductive terminal in spaced relation to the first terminal, the first terminal encompassed by the second terminal. The device also includes an electrically insulating spacer that encompasses the first terminal and provides the spaced relation between the second terminal and the first terminal. It also includes a nanotube article comprising at least one carbon nanotube, the nanotube article being arranged to overlap at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals that is capable of applying a first electrical stimulus to at least one of the first and second terminals to change the resistance of the device between the first and second terminals from a relatively low resistance to a relatively high resistance.

US Patent:

8426309, Apr 23, 2013

Filed:

Sep 10, 2010

Appl. No.:

12/879400

Inventors:

Jonathan W. Ward - Fairfax VA, US
Michael J. O'Connor - Manassas Park VA, US

Assignee:

Lockheed Martin Corporation - Bethesda MD

International Classification:

H01L 21/44

US Classification:

438672, 438199, 438153, 257E2127, 977734

Abstract:

Embodiments of the present invention provide methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices. Embodiments of the present invention also provide methods for passivating graphene nanoelectronic devices, which enable stacking of multiple graphene devices and the creation of high density graphene based circuits. Other embodiments provide methods for producing devices with graphene layer segments having multiple thicknesses.

US Patent:

20130217215, Aug 22, 2013

Filed:

Mar 19, 2013

Appl. No.:

13/847433

Inventors:

Lockheed Martin Corporation - , US
Michael J. O'CONNOR - Manassas Park VA, US

Assignee:

Lockheed Martin Corporation - Bethesda MD

International Classification:

H01L 21/02

US Classification:

438507, 977890

Abstract:

Methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices, is provided. One method includes the steps of preparing a dispersion of functionalized graphene in a solvent; and applying a coating of said dispersion onto a substrate and evaporating the solvent to form a layer of functionalized graphene; and defunctionalizing the graphene to form a graphene layer on the substrate.

US Patent:

61417777, Oct 31, 2000

Filed:

Sep 5, 1997

Appl. No.:

8/924208

Inventors:

George M. Cutrell - Centreville VA
James Healy - Brookeville MD
William C. Holford - Colorado Springs CO
Dennis L. Maino - Colorado Springs CO
Michael J. O'Connor - Monument CO
Milton A. Steiner - Colorado Springs CO

Assignee:

MCI Communications Corporation - Washington DC

International Classification:

H02H 305

US Classification:

714 47

Abstract:

A system and method for reporting, directly to a customer, conditions of telecommunications services to which the customer subscribes. The system includes a server for collecting fault information from the telecommunications network management system and a customer workstation for viewing the information. The customer can use the workstation to define a view of the data he wishes to receive. The server builds reports using the view, and provides the reports to the customer.