Michael A Pickering

US Patent:

6811761, Nov 2, 2004

Filed:

Nov 9, 2001

Appl. No.:

10/035877

Inventors:

Nathaniel E. Brese - Lansdale PA
Jitendra S. Goela - Andover MA
Michael A. Pickering - Dracut MA

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

C01B 3136

US Classification:

423345, 423346

Abstract:

A chemical vapor deposited, phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

US Patent:

7438884, Oct 21, 2008

Filed:

Aug 2, 2004

Appl. No.:

10/909667

Inventors:

Nathaniel E. Brese - Lansdale PA, US
Jitendra S. Goela - Andover MA, US
Michael A. Pickering - Dracut MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C01B 31/36

US Classification:

423345, 423346

Abstract:

A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.