Michael D Potter

US Patent:

20090094306, Apr 9, 2009

Filed:

Oct 9, 2007

Appl. No.:

11/869029

Inventors:

Gahn W. Krishnakalin - Austin TX, US
Emiliano Lozano - Austin TX, US
Michael P. Potter - Austin TX, US
Samuel I. Ward - Round Rock TX, US

International Classification:

G06F 7/38

US Classification:

708440

Abstract:

A computer-implemented method for performing a calculation using a coordinate rotation digital computer (CORDIC) algorithm. A step of the coordinate rotation digital computer algorithm is performed. As a result of performing the step, a value of the coordinate rotation digital computer algorithm is reduced. The value is shifted using a physical adder. A set of bits of the physical adder is disabled, wherein the set of bits corresponds to at least one high order zero of the value.

US Patent:

55302629, Jun 25, 1996

Filed:

May 25, 1995

Appl. No.:

8/541763

Inventors:

John E. Cronin - Milton VT
Kent E. Morrett - Essex Junction VT
Michael D. Potter - Grand Isle VT
Matthew J. Rutten - Milton VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2906

US Classification:

257 10

Abstract:

Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.

US Patent:

56295804, May 13, 1997

Filed:

Oct 28, 1994

Appl. No.:

8/331307

Inventors:

Jack A. Mandelman - Stormville NY
Michael D. Potter - Grand Isle VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 116

US Classification:

313310

Abstract:

Lateral field emission devices ("FEDs") for display elements and methods of fabrication are set forth. The FED includes a thin-film emitter oriented parallel to, and disposed above, a substrate. The FED further includes a columnar shaped anode having a first lateral surface. A phosphor layer is disposed adjacent to the first lateral surface. Specifically, the anode is oriented such that the lateral surface and adjacent phosphor layer are perpendicular to the substrate. The emitter has a tip which is spaced less than the mean free distance of an electron in air from the phosphor layer. Operationally, when a voltage potential is applied between said anode and said emitter, electrons are emitted from the tip of the emitter into the phosphor layer causing the phosphor layer to emit electromagnetic energy. Further specific details of the field emission device, fabrication method, method of operation, and associated display are set forth.

US Patent:

56182163, Apr 8, 1997

Filed:

Jun 2, 1995

Appl. No.:

8/459033

Inventors:

Michael D. Potter - Grand Isle VT

Assignee:

Advanced Vision Technologies, Inc. - Rochester NY

International Classification:

H01J 902

US Classification:

445 24

Abstract:

A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode stucture (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce the novel devices and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20) and allow fabrication of devices having various functions and complexity. The anode (70) is simply fabricated, without the use of prior-art processes which formed a spacer made by a conformal coating.

US Patent:

53127773, May 17, 1994

Filed:

Sep 25, 1992

Appl. No.:

7/951283

Inventors:

John E. Cronin - Milton VT
Kent E. Morrett - Essex Junction VT
Michael D. Potter - Grand Isle VT
Matthew J. Rutten - Milton VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2144

US Classification:

437195

Abstract:

Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.

US Patent:

57033803, Dec 30, 1997

Filed:

Jun 13, 1995

Appl. No.:

8/490061

Inventors:

Michael D. Potter - Grand Isle VT

Assignee:

Advanced Vision Technologies Inc. - Rochester NY

International Classification:

H01L 2906
H01J 146

US Classification:

257 10

Abstract:

A lateral-emitter electron field emission device structure incorporates a thin film laminar composite emitter structure including two or more films composed of materials having different etch rates when etched by an etchant. In its simplest form, the laminar composite emitter consists of two ultra-thin layers, etched differentially so that a salient remaining portion of the more etch-resistant layer protrudes beyond the less etch-resistant layer to form a small-radius tip. In a preferred form of the laminar composite emitter, it is a multi-layer laminar emitter, of which the most etch-resistant layer is doped-diamond. The diamond layer is doped using one or more N-type dopants. In this preferred emitter structure, the edge of the thin film diamond layer is the dominant electron emitter with a very low (nearly zero) work function. Hence the new device can operate at applied voltages substantially lower than in prior art. The laminar structure may be a sandwich structure with three layers.

US Patent:

56441908, Jul 1, 1997

Filed:

Jul 5, 1995

Appl. No.:

8/498505

Inventors:

Michael D. Potter - Grand Isle VT

Assignee:

Advanced Vision Technologies, Inc. - Rochester NY

International Classification:

H01J 1924

US Classification:

313336

Abstract:

A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge in direct contact with and extending into a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles.

US Patent:

56441886, Jul 1, 1997

Filed:

May 8, 1995

Appl. No.:

8/438023

Inventors:

Michael D. Potter - Grand Isle VT

Assignee:

Advanced Vision Technologies, Inc. - Rochester NY

International Classification:

H01J 116
H01J 1924

US Classification:

313309

Abstract:

A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc. having one or more control electrodes 140 and/or 170 positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode.

Address:

11503 Tedford St, Austin, TX 78753

Phone:

(512)3391999

VIN:

1GCHK33617F509004

Make:

CHEVROLET

Model:

SILVERADO 3500HD

Year:

2007