Michael Kevin Todd

US Patent:

6458718, Oct 1, 2002

Filed:

Apr 24, 2001

Appl. No.:

09/841525

Inventors:

Michael A. Todd - Phoenix AZ

Assignee:

ASM Japan K.K.

International Classification:

H01L 21469

US Classification:

438778

Abstract:

Chemical precursors that contain carbon atoms and fluorine atoms can be activated under a variety of conditions to deposit fluorine-containing materials. Chemical precursors of the formula (F C) MX R , are preferred, wherein M is Si or Ge; X is halogen; R is H or D; m is 0, 1, 2 or 3; and n is 0, 1, 2, or 3; with the proviso that (m+n)3.

US Patent:

6630413, Oct 7, 2003

Filed:

Apr 26, 2001

Appl. No.:

09/843456

Inventors:

Michael A. Todd - Phoenix AZ

Assignee:

ASM Japan K.K.

International Classification:

H01L 21324

US Classification:

438795, 438758, 438775, 438780, 438781, 438789, 438790, 438791

Abstract:

Low hydrogen-content silicon nitride materials are deposited by a variety of CVD techniques, preferably thermal CVD and PECVD, using chemical precursors that contain silicon atoms, nitrogen atoms, or both. A preferred chemical precursor contains one or more NâSi bonds. Another preferred chemical precursor is a mixture of a N-containing chemical precursor with a Si-containing chemical precursor that contains less than 9. 5 weight % hydrogen atoms. A preferred embodiment uses a hydrogen source to minimize the halogen content of silicon nitride materials deposited by PECVD.

US Patent:

6674928, Jan 6, 2004

Filed:

Jul 31, 2001

Appl. No.:

09/917643

Inventors:

Gregg A. Johnson - Fairfax VA
Michael D. Todd - Alexandria VA
Bryan L. Althouse - Davidsonville MD
Chia-Chen Chang - Rockville MD

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

G02B 600

US Classification:

385 12, 385 13, 385 14, 385 37

Abstract:

A new optical sensing device containing fiber Bragg gratings, a scanning bandpass filter, an interferometer and multiple photodetectors is disclosed. The present invention also describes a new system and method for fibre Bragg grating (FBG) sensor interrogation and multiplexing. The new system combines a scanning Fabry-Perot (SFP) bandpass filter used to wavelength-multiplex multiple gratings in a single fiber, and an unbalanced Mach-Zehnder fibre interferometer made with a 3Ã3 coupler to detect strain-induced wavelength shifts. A passive technique for interferometer drift compensation using non-sensing FBGs is included in the system. A complete prototype system interrogates four gratings in a single fiber at a Nyquist sampling rate up to 10 kHz, with a noise floor measured near 4 n Hz above 0. 1 Hz. The inclusion of the interferometer drift compensation technique is shown to make quasi-static measurements feasible.

US Patent:

6716713, Apr 6, 2004

Filed:

Nov 13, 2002

Appl. No.:

10/294235

Inventors:

Michael A. Todd - Phoenix AZ

Assignee:

Asm America, Inc. - Phoenix AZ

International Classification:

H01L 21331

US Classification:

438369, 438488

Abstract:

Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H Si) MR , (H Si) N, and (H Si) N , wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.

US Patent:

6716751, Apr 6, 2004

Filed:

Feb 11, 2002

Appl. No.:

10/074149

Inventors:

Michael A. Todd - Phoenix AZ

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

H01L 2144

US Classification:

438680, 438674, 438585, 427595

Abstract:

Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H Si) MR , (H Si) N, and (H Si) N , wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.

US Patent:

6733830, May 11, 2004

Filed:

Feb 7, 2001

Appl. No.:

09/779397

Inventors:

Michael A. Todd - Phoenix AZ

Assignee:

ASM Japan K.K.

International Classification:

C23C 1624

US Classification:

42725528, 42725529, 427255395

Abstract:

Chemical vapor deposition processes result in films having low dielectric constants when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)fluorosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalkyl)fluorosilanes, alkylsiloxysilanes, alkoxysilanes, alkylalkoxysilanes, silylmethanes, alkoxysilylmethanes, alkylalkoxysilylmethanes, alkoxymethanes, alkylalkoxymethanes, and mixtures thereof. The precursors are particularly suited to thermal CVD for producing low dielectric constant films at relatively low temperatures, particularly without the use of additional oxidizing agents. Such films are useful in the microelectronics industry.

US Patent:

6743738, Jun 1, 2004

Filed:

Nov 13, 2002

Appl. No.:

10/294233

Inventors:

Michael A. Todd - Phoenix AZ

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

H01L 2131

US Classification:

438778, 438257

Abstract:

Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H Si) MR , (H Si) N, and (H Si) N , wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.

US Patent:

6818570, Nov 16, 2004

Filed:

Jan 24, 2003

Appl. No.:

10/351669

Inventors:

Naoto Tsuji - Tama, JP
Yukihiro Mori - Tama, JP
Satoshi Takahashi - Tama, JP
Kiyohiro Matsushita - Tama, JP
Atsuki Fukazawa - Tama, JP
Michael Todd - Phoenix AZ

Assignee:

ASM Japan K.K. - Tokyo

International Classification:

H01L 2100

US Classification:

438910, 438680

Abstract:

A silicon-containing insulation film having high mechanical strength is formed on a semiconductor substrate by (a) introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed; (b) applying radio-frequency power to create a plasma reaction space inside the reaction chamber; and (c) controlling a flow of the reaction gas and an intensity of the radio-frequency power.