Michael F Todd

US Patent:

6767830, Jul 27, 2004

Filed:

Aug 7, 2002

Appl. No.:

10/213669

Inventors:

Ziyun Wang - New Milford CT
Chongying Xu - New Milford CT
Thomas H. Baum - New Fairfield CT
Michael A. Todd - Phoenix AZ
Niamh McMahon - Binnirgen, IE

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

H01L 2144

US Classification:

438681, 427523, 427587, 427593, 438604, 556 70

Abstract:

A volatile solid-source novel antimony precursor, Br SbCH , that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e. g. , chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br SbCH crystalline product.

US Patent:

61466085, Nov 14, 2000

Filed:

Nov 24, 1997

Appl. No.:

8/977225

Inventors:

Michael A. Todd - Danbury CT
Thomas H. Baum - New Fairfield CT
Gautam Bhandari - Danbury CT

Assignee:

Advanced Technology Materials, Inc. - Danbury MI

International Classification:

C01B 400
C01B 600
C07F 990

US Classification:

423249

Abstract:

A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (. sup. 2. sub. 1 H) or tritium (. sup. 3. sub. 1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e. g. , antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e. g. , laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.

US Patent:

60051272, Dec 21, 1999

Filed:

Nov 24, 1997

Appl. No.:

8/977507

Inventors:

Michael A. Todd - Danbury CT
Thomas H. Baum - New Fairfield CT
Gautam Bhandari - Danbury CT

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C07F 970

US Classification:

556 70

Abstract:

An antimony/Lewis base adduct of the formula SbR. sub. 3. L, wherein each R is independently selected from C. sub. 1 -C. sub. 8 alkyl, C. sub. 1 -C. sub. 8 perfluoroalkyl, C. sub. 1 -C. sub. 8 haloalkyl, C. sub. 6 -C. sub. 10 aryl, C. sub. 6 -C. sub. 10 perfluoroaryl, C. sub. 6 -C. sub. 10 haloaryl, C. sub. 6 -C. sub. 10 cycloalkyl, substituted C. sub. 6 -C. sub. 10 aryl and halo; and L is a Lewis base ligand coordinating with SbR. sub. 3. The adducts of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e. g. , laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.

US Patent:

60011726, Dec 14, 1999

Filed:

Aug 5, 1997

Appl. No.:

8/906039

Inventors:

Gautam Bhandari - Danbury CT
W. Karl Olander - Indian Shore FL
Michael A. Todd - Danbury CT
Timothy Glassman - Millshora OR

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C30B 2514

US Classification:

117 84

Abstract:

A method and apparatus for generating a dopant gas species which is a reaction product of a metal and a gas reactive therewith to form the dopant gas species. A source mass of metal is provided and contacted with the reactive gas to yield a dopant gas species. The dopant gas species may be passed to a chemical vapor deposition reactor, or flowed to an ionization chamber to generate ionic species for ion implantation.

US Patent:

63195658, Nov 20, 2001

Filed:

Jun 26, 2000

Appl. No.:

9/603597

Inventors:

Michael A. Todd - Danbury CT
Thomas H. Baum - New Fairfield CT
Gautam Bhandari - Danbury CT

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C23C 800
C23C 1414
H05H 124

US Classification:

427531

Abstract:

A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (. sup. 2. sub. 1 H) or tritium (. sup. 3. sub. 1 H) isotope. The metal constituent of such metal hydride may, be a Group III, IV or V metal or a transition metal, e. g. , antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e. g. , laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.