Michael James Yang

US Patent:

6423949, Jul 23, 2002

Filed:

May 19, 1999

Appl. No.:

09/314845

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

US Patent:

6455421, Sep 24, 2002

Filed:

Jul 31, 2000

Appl. No.:

09/629778

Inventors:

Toshio Itoh - Palo Alto CA
Michael X. Yang - Fremont CA
Christophe Marcadal - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2144

US Classification:

438656, 438648, 438681, 438785, 438793, 438798

Abstract:

A method of forming tantalum nitride (TaN) compound layers for use in integrated circuit fabrication processes is disclosed. The tantalum nitride (TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated.

US Patent:

6482852, Nov 19, 2002

Filed:

May 11, 2001

Appl. No.:

09/854027

Inventors:

William C. Shakespeare - Framingham MA
Michael G. Yang - Chestnut Hill MA
Rajeswari Sundaramoorthi - Watertown MA
Regine Bohacek - Boston MA
Charles Joseph Eyermann - Sudbury MA
Tomi K. Sawyer - Southborough MA

Assignee:

Ariad Pharmaceuticals, Inc. - Cambridge MA

International Classification:

A61K 3121

US Classification:

514506, 514553, 514563, 514571, 558172, 562 14, 562471

Abstract:

This invention concerns compounds for inhibiting intracellular signal transduction, especially intracellular signal transduction mediated by one or more molecular interactions involving a phosphotyrosine-containing protein. This invention also relates to pharmaceutical compositions containing the compounds and prophylactic and therapeutic methods involving pharmaceutical and veterinary administration of the compounds. The compounds are of the formula as defined herein.

US Patent:

6530992, Mar 11, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350632

Inventors:

Michael X. Yang - Fremont CA
Henry Ho - San Jose CA
Steven A. Chen - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118695, 118697, 118704, 118715, 118725, 118728, 438791, 700121

Abstract:

Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

US Patent:

6573295, Jun 3, 2003

Filed:

Nov 21, 2001

Appl. No.:

09/990637

Inventors:

William C. Shakespeare - Framingham MA
Michael G. Yang - Chestnut Hill MA
Rajeswari Sundaramoorthi - Watertown MA
Regine Bohacek - Boston MA
Charles Joseph Eyermann - Sudbury MA
Tomi K. Sawyer - Southborough MA

Assignee:

Ariad Pharmaceuticals, Inc. - Cambridge MA

International Classification:

A61K 31335

US Classification:

514450, 514456, 514470, 549355, 549404, 549467

Abstract:

This invention concerns compounds for inhibiting intracellular signal transduction, especially intracellular signal transduction mediated by one or more molecular interactions involving a phosphotyrosine-containing protein. This invention also relates to pharmaceutical compositions containing the compounds and prophylactic and therapeutic methods involving pharmaceutical and veterinary administration of the compounds. The compounds are of the formula as defined herein.

US Patent:

6576766, Jun 10, 2003

Filed:

Aug 17, 2000

Appl. No.:

09/554230

Inventors:

Manfred Weigele - Cambridge MA
Regine Bohacek - Boston MA
Virginia A. Jacobsen - Boston MA
Karina Macek - Winchester MA
Michael G. Yang - Wilmington DE
Noriyuki H. Kawahata - Medford MA
Rajeswari Sundaramoorthi - Watertown MA
Yihan Wang - Belmont MA
Craig S. Takeuchi - San Diego CA
George P. Luke - Branford CT
William C. Shakespeare - Framingham MA
Tomi K. Sawyer - Southborough MA

Assignee:

Ariad Pharmaceuticals, Inc. - Cambridge MA

International Classification:

C07D30789

US Classification:

548414, 549 10, 549299, 558159, 558170, 562 14, 562 15, 562451

Abstract:

This invention concerns compounds for inhibiting intracellular signal transduction, especially intracellular signal transduction mediate by one or more molecular interactions involving a phosphotyrosine-containing protein. This invention also relates to pharmaceutic compositions containing the compounds and prophylactic and therapeutic methods involving pharmaceutical and veterinary administration of the compounds. The compounds are of formula (1) as defined herein.

US Patent:

6645884, Nov 11, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350810

Inventors:

Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2102

US Classification:

438791, 438584, 438680, 438758, 438774, 438775

Abstract:

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

US Patent:

6646235, Nov 11, 2003

Filed:

Oct 19, 2001

Appl. No.:

10/037151

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.