Michael Tai Chi Yang

US Patent:

6423949, Jul 23, 2002

Filed:

May 19, 1999

Appl. No.:

09/314845

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

US Patent:

6455421, Sep 24, 2002

Filed:

Jul 31, 2000

Appl. No.:

09/629778

Inventors:

Toshio Itoh - Palo Alto CA
Michael X. Yang - Fremont CA
Christophe Marcadal - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2144

US Classification:

438656, 438648, 438681, 438785, 438793, 438798

Abstract:

A method of forming tantalum nitride (TaN) compound layers for use in integrated circuit fabrication processes is disclosed. The tantalum nitride (TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated.

US Patent:

6530992, Mar 11, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350632

Inventors:

Michael X. Yang - Fremont CA
Henry Ho - San Jose CA
Steven A. Chen - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118695, 118697, 118704, 118715, 118725, 118728, 438791, 700121

Abstract:

Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

US Patent:

6645884, Nov 11, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350810

Inventors:

Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2102

US Classification:

438791, 438584, 438680, 438758, 438774, 438775

Abstract:

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

US Patent:

6646235, Nov 11, 2003

Filed:

Oct 19, 2001

Appl. No.:

10/037151

Inventors:

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05B 368

US Classification:

2194441, 118725

Abstract:

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

US Patent:

6660126, Dec 9, 2003

Filed:

Mar 2, 2001

Appl. No.:

09/798251

Inventors:

Anh N. Nguyen - Milpitas CA
Michael X. Yang - Palo Alto CA
Ming Xi - Milpitas CA
Hua Chung - San Jose CA
Anzhong Chang - San Jose CA
Xiaoxiong Yuan - Cupertino CA
Siqing Lu - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 100

US Classification:

15634534, 15634533, 118715

Abstract:

A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

US Patent:

6720027, Apr 13, 2004

Filed:

Apr 8, 2002

Appl. No.:

10/119369

Inventors:

Michael X. Yang - Palo Alto CA
Ming Xi - Palo Alto CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05D 512

US Classification:

427123, 427250, 427255394, 4272557, 427331, 427402, 427404

Abstract:

Embodiments of the invention relate to an apparatus and method of depositing a titanium silicon nitride layer by cyclical deposition. In one aspect, a titanium silicon nitride layer having a variable content or a controlled composition of titanium, silicon, and nitrogen through the depth of the layer may be formed. One embodiment of this variable content titanium silicon nitride layer or tuned titanium silicon nitride layer includes a bottom sub-layer of TiSi N , a middle sub-layer of TiSi N , and a top sub-layer of TiSi N in which X1 is less than X2 and X3 is less than X2. Another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSi N and a top sub-layer of TiSi N in which X2 is greater than X1. Still another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSi N , a middle sub-layer of TiSi N , and a top sub-layer of TiSi N in which X1 is greater than X2 and X3 is greater than X2.

US Patent:

6797340, Sep 28, 2004

Filed:

Oct 10, 2002

Appl. No.:

10/268195

Inventors:

Hongbin Fang - Mountain View CA
Hyung-Suk A. Yoon - Santa Clara CA
Ken Kaung Lai - Milpitas CA
Chi Chung Young - Hsin Chu, TW
James Horng - Hsin Chu, TW
Ming XI - Palo Alto CA
Michael X. Yang - Palo Alto CA
Hua Chung - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 800

US Classification:

427585, 427250, 42725515, 42725517, 42725518, 42725521, 42725538, 42725539, 427255392, 427255394, 427255395, 4272557, 427294, 427299, 427404, 4274197

Abstract:

A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH ), disilane (Si H ), dichlorosilane (SiCl H ), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.