Michelle K Martin

US Patent:

20220291838, Sep 15, 2022

Filed:

Mar 15, 2021

Appl. No.:

17/202163

Inventors:

- San Jose CA, US
Alan D. BENNETT - Edinburgh, GB
Liam PARKER - Edinburgh, GB
Yuval SHOHET - Acton MA, US
Michelle MARTIN - Westford MA, US

International Classification:

G06F 3/06
G06F 11/10

Abstract:

The present disclosure generally relates to improving programming to data storage devices, such as solid state drives (SSDs). A first memory device has a first XOR element and a second memory device has a second XOR element. The ratio of the first XOR element to the capacity of the first memory device is substantially smaller than the ratio of the second XOR element to the capacity of the second memory device. A read verify operation to find program failures is executed on either a wordline to wordline basis, an erase block to erase block basis, or both a wordline to wordline basis and an erase block to erase block basis. Because the program failures are found and fixed prior to programming to the second memory device, the second XOR element may be decreased substantially.

US Patent:

20140208174, Jul 24, 2014

Filed:

Jan 22, 2013

Appl. No.:

13/746542

Inventors:

- Chandler AZ, US
James Fitzpatrick - Sudbury MA, US
Mark Dancho - Chandler AZ, US
Michelle Martin - Westford MA, US

Assignee:

SMART STORAGE SYSTEMS, INC. - Chandler AZ

International Classification:

G11C 29/50

US Classification:

714721

Abstract:

A method of operation of a storage control system includes: determining a bit error rate of a page; calculating a slope based on the bit error rate; and adjusting a threshold voltage for the page based on the slope for reading a memory device.