Min Feng Yu

US Patent:

6387819, May 14, 2002

Filed:

Apr 29, 1998

Appl. No.:

09/069568

Inventors:

Min Yu - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21302

US Classification:

438725, 216 67, 216 41, 216 51

Abstract:

A method of etching an organic dielectric layer on a substrate with a high etching rate and a high etching selectivity ratio. The organic dielectric layer comprises a low k dielectric material, such as a silicon-containing organic polymer, for example, benzocyclobutene. A patterned mask layer is formed on the organic dielectric layer , and the substrate is placed in a process zone of a process chamber. An energized process gas introduced into the process zone , comprises an oxygen-containing gas for etching the organic dielectric layer , a non-reactive gas for removing dissociated material to enhance the etching rate, and optionally, passivating gas for forming passivating deposits on sidewalls of freshly etched features to promote anisotropic etching. Preferably, during etching, the temperature of substrate is maintained at a low temperature of from about 15Â C. of 80Â C.

US Patent:

6669858, Dec 30, 2003

Filed:

Nov 5, 2001

Appl. No.:

10/011369

Inventors:

Claes H. Bjorkman - Mountain View CA
Min Melissa Yu - San Jose CA
Hongquing Shan - San Jose CA
David W. Cheung - Foster City CA
Kuowei Liu - Santa Clara CA
Nasreen Gazala Chapra - Menlo Park CA
Gerald Yin - Cupertino CA
Farhad K. Moghadam - Saratoga CA
Judy H. Huang - Los Gatos CA
Dennis Yost - Los Gatos CA
Betty Tang - San Jose CA
Yunsang Kim - Santa Clara CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

B44C 122

US Classification:

216 72, 216 13, 216 17, 216 64, 216 74, 438706, 438735, 438737, 438738, 438740, 438778, 438779

Abstract:

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

US Patent:

6858153, Feb 22, 2005

Filed:

Nov 5, 2001

Appl. No.:

10/011368

Inventors:

Claes H. Bjorkman - Mountain View CA, US
Min Melissa Yu - San Jose CA, US
Hongquing Shan - San Jose CA, US
David W. Cheung - Foster City CA, US
Kuowei Liu - Santa Clara CA, US
Nasreen Gazala Chapra - Menlo Park CA, US
Gerald Yin - Cupertino CA, US
Farhad K. Moghadam - Saratoga CA, US
Judy H. Huang - Los Gatos CA, US
Dennis Yost - Los Gatos CA, US
Betty Tang - San Jose CA, US
Yunsang Kim - Santa Clara CA, US

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C23F001/00

US Classification:

216 72, 216 59, 216 63, 216 64, 216 67, 438780, 438618, 438689, 438735, 438737, 438778

Abstract:

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

US Patent:

6340435, Jan 22, 2002

Filed:

Jun 9, 1999

Appl. No.:

09/329012

Inventors:

Claes H. Bjorkman - Mountain View CA
Min Melissa Yu - San Jose CA
Hongquing Shan - San Jose CA
David W. Cheung - Foster City CA
Kuowei Liu - Santa Clara CA
Nasreen Gazala Chapra - Menlo Park CA
Gerald Yin - Cupertino CA
Farhad K. Moghadam - Saratoga CA
Judy H. Huang - Los Gatos CA
Dennis Yost - Los Gatos CA
Betty Tang - San Jose CA
Yunsang Kim - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23F 100

US Classification:

216 72, 216 13, 216 17, 216 18, 216 64, 216 74, 216 76, 438689, 438702, 438780

Abstract:

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.