Min B Yu

US Patent:

6669858, Dec 30, 2003

Filed:

Nov 5, 2001

Appl. No.:

10/011369

Inventors:

Claes H. Bjorkman - Mountain View CA
Min Melissa Yu - San Jose CA
Hongquing Shan - San Jose CA
David W. Cheung - Foster City CA
Kuowei Liu - Santa Clara CA
Nasreen Gazala Chapra - Menlo Park CA
Gerald Yin - Cupertino CA
Farhad K. Moghadam - Saratoga CA
Judy H. Huang - Los Gatos CA
Dennis Yost - Los Gatos CA
Betty Tang - San Jose CA
Yunsang Kim - Santa Clara CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

B44C 122

US Classification:

216 72, 216 13, 216 17, 216 64, 216 74, 438706, 438735, 438737, 438738, 438740, 438778, 438779

Abstract:

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

US Patent:

6858153, Feb 22, 2005

Filed:

Nov 5, 2001

Appl. No.:

10/011368

Inventors:

Claes H. Bjorkman - Mountain View CA, US
Min Melissa Yu - San Jose CA, US
Hongquing Shan - San Jose CA, US
David W. Cheung - Foster City CA, US
Kuowei Liu - Santa Clara CA, US
Nasreen Gazala Chapra - Menlo Park CA, US
Gerald Yin - Cupertino CA, US
Farhad K. Moghadam - Saratoga CA, US
Judy H. Huang - Los Gatos CA, US
Dennis Yost - Los Gatos CA, US
Betty Tang - San Jose CA, US
Yunsang Kim - Santa Clara CA, US

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C23F001/00

US Classification:

216 72, 216 59, 216 63, 216 64, 216 67, 438780, 438618, 438689, 438735, 438737, 438778

Abstract:

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

US Patent:

6340435, Jan 22, 2002

Filed:

Jun 9, 1999

Appl. No.:

09/329012

Inventors:

Claes H. Bjorkman - Mountain View CA
Min Melissa Yu - San Jose CA
Hongquing Shan - San Jose CA
David W. Cheung - Foster City CA
Kuowei Liu - Santa Clara CA
Nasreen Gazala Chapra - Menlo Park CA
Gerald Yin - Cupertino CA
Farhad K. Moghadam - Saratoga CA
Judy H. Huang - Los Gatos CA
Dennis Yost - Los Gatos CA
Betty Tang - San Jose CA
Yunsang Kim - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23F 100

US Classification:

216 72, 216 13, 216 17, 216 18, 216 64, 216 74, 216 76, 438689, 438702, 438780

Abstract:

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.