Ming Te Li

US Patent:

7642202, Jan 5, 2010

Filed:

Jun 27, 2005

Appl. No.:

11/168013

Inventors:

Ming Li - West Linn OR, US
Bart Van Schravendijk - Sunnyvale CA, US
Tom Mountsier - San Jose CA, US
Chiu Chi - San Jose CA, US
Kevin Ilcisin - Beaverton OR, US
Julian Hsieh - Pleasanton CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438786, 438624, 438783, 257E21627, 257E21277

Abstract:

A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.

US Patent:

8003549, Aug 23, 2011

Filed:

Nov 20, 2009

Appl. No.:

12/623305

Inventors:

Ming Li - West Linn OR, US
Bart Van Schravendijk - Sunnyvale CA, US
Tom Mountsier - San Jose CA, US
Chiu Chi - San Jose CA, US
Kevin Ilcisin - Beaverton OR, US
Julian Hsieh - Pleasanton CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438786, 438624, 438783, 257E21627, 257E21277

Abstract:

A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.

US Patent:

8017527, Sep 13, 2011

Filed:

Dec 16, 2008

Appl. No.:

12/336386

Inventors:

Arul N. Dhas - Sherwood OR, US
Ming Li - West Linn OR, US
Joseph Bradley Laird - Sherwood OR, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/31
H01L 21/469
A23G 3/24
B05C 3/00
B01D 47/00
F02M 37/00
F02M 69/02
F02M 5/08
B01F 5/04

US Classification:

438778, 438780, 438781, 257E21094, 257E21477, 118429, 118723 E, 118 29, 261 341, 261 38, 261 42, 261 442, 261 76

Abstract:

Apparatuses and methods for diverting a flow of a liquid precursor during flow stabilization and plasma stabilization stages during PECVD processes are effective at eliminating particle defects in PECVD films deposited using a liquid precursor.

US Patent:

8101531, Jan 24, 2012

Filed:

Sep 23, 2010

Appl. No.:

12/889132

Inventors:

Ming Li - West Linn OR, US
Hu Kang - Tualatin OR, US
Mandyam Sriram - Beaverton OR, US
Adrien LaVoie - Portland OR, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/469

US Classification:

438788, 438789, 438792, 427535, 257E21576

Abstract:

Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.

US Patent:

8524612, Sep 3, 2013

Filed:

Jan 21, 2011

Appl. No.:

13/011569

Inventors:

Ming Li - West Linn OR, US
Hu Kang - Tualatin OR, US
Mandyam Sriram - Beaverton OR, US
Adrien LaVoie - Portland OR, US

Assignee:

Novellus Systems, Inc. - Fremont CA

International Classification:

H01L 21/31
H01L 21/469
H01L 21/44

US Classification:

438762, 438667, 438778, 438787

Abstract:

Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.

US Patent:

8628618, Jan 14, 2014

Filed:

Sep 28, 2010

Appl. No.:

12/892279

Inventors:

Damien Slevin - Salem OR, US
Brad Laird - Sherwood OR, US
Curtis Bailey - West Linn OR, US
Ming Li - West Linn OR, US
Sirish Reddy - Hillsboro OR, US
James Sims - Tigard OR, US
Mohamed Sabri - Beaverton OR, US

Assignee:

Novellus Systems Inc. - San Jose CA

International Classification:

C23C 16/52
C23C 16/448
C23C 16/455
C23C 16/50
C23C 16/00

US Classification:

118715, 118726, 118723 R

Abstract:

A vapor delivery system for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system includes a vapor supply that supplies vapor by vaporizing at least one liquid precursor in a carrier gas. A first path includes a first filter that filters the vapor flowing from the vapor supply to the chamber. At least one second path is parallel to the first path and includes a second filter that filters vapor flowing from the vapor supply to the chamber. A plurality of valves are configured to switch delivery of the vapor to the chamber between the first path and the second path.

US Patent:

20040091717, May 13, 2004

Filed:

Nov 13, 2002

Appl. No.:

10/294301

Inventors:

Ming Li - West Linn OR, US
Yang Zhuang - West Linn OR, US
Jason Tian - West Linn OR, US
Zhiyuan Fang - West Linn OR, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H05H001/24
B32B017/06

US Classification:

428/426000, 427/579000

Abstract:

Nitrogen-free reactant gas containing silicon, oxygen, and fluorine atoms is flowed to a nitrogen-free CVD reaction chamber. Preferably, SiHgas, SiFgas, and COare flowed to the reaction chamber. Radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD or HPD-CVD apparatus. Reactive components formed in the plasma react to form low-dielectric-constant nitrogen-free fluorine-doped silicate glass (FSG) on a substrate surface.

US Patent:

20110146571, Jun 23, 2011

Filed:

Dec 18, 2009

Appl. No.:

12/642497

Inventors:

Christopher M. Bartlett - Beaverton OR, US
Ming Li - West Linn OR, US
Jon Henri - West Linn OR, US
Marshall R. Stowell - Wilsonville OR, US
Mohammed Sabri - Beaverton OR, US

International Classification:

C23C 16/52
C23C 16/00

US Classification:

118667

Abstract:

A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.