Ming Li

US Patent:

61260576, Oct 3, 2000

Filed:

Feb 26, 1999

Appl. No.:

9/258719

Inventors:

Ming Chu Li - Chandler AZ

International Classification:

B25C 700

US Classification:

227136

Abstract:

An improved magazine structure for nailing machines includes a magazine body. The magazine body includes a base disk, a supporting disk, and a rod fixedly disposed on the supporting disk. The base disk is provided with a slot for passage of the rod. The rod has a sliding wheel disposed at a bottom portion thereof to allow the rod to displace slidably along the slot. The rod is disposed at a central position of the base disk, whereby the rod disposed at the central position of the base disk is caused to displace slidably outward to bring the support disk to displace therewith, so that a nail reel can be fitted vertically onto the supporting disk to achieve convenient and quick installation of the nail reel.

US Patent:

20220267642, Aug 25, 2022

Filed:

Jul 24, 2020

Appl. No.:

17/629698

Inventors:

- TEMPE AZ, US
ROBERT G. RIDGEWAY - CHANDLER AZ, US
XINJIAN LEI - VISTA CA, US
MING LI - SAN MARCOS CA, US
MANCHAO XIAO - SAN DIEGO CA, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

C09D 183/16
C08G 77/50
C23C 16/50
C23C 16/56
C23C 16/32
C23C 16/34
C23C 16/30

Abstract:

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.

US Patent:

20220178028, Jun 9, 2022

Filed:

Apr 17, 2020

Appl. No.:

17/606438

Inventors:

- TEMPE AZ, US
MING LI - TEMPE AZ, US
MATTHEW R. MACDONALD - MISSION VIEJO CA, US
MEILIANG WANG - SHANGHAI, CN

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

C23C 16/455
C01B 33/12
C07F 7/10
C23C 16/40
C23C 16/44

Abstract:

An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500 C. is performed using at least one organoaminodisilazane precursor having the following Formula I:wherein Rand Rare each independently selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group with a proviso that Rand Rcannot be both hydrogen; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group; and either Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure.