Mitchell W Taylor

US Patent:

7015108, Mar 21, 2006

Filed:

Feb 26, 2004

Appl. No.:

10/789851

Inventors:

Aaron O. Vanderpool - Gilbert AZ, US
Mitchell C. Taylor - Lake Oswego OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21/336

US Classification:

438305

Abstract:

The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.

US Patent:

7235843, Jun 26, 2007

Filed:

Jan 5, 2006

Appl. No.:

11/325864

Inventors:

Aaron O. Vanderpool - Gilbert AZ, US
Mitchell C. Taylor - Lake Oswego OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 29/78

US Classification:

257336, 257E29278

Abstract:

The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.

US Patent:

20080160683, Jul 3, 2008

Filed:

Dec 29, 2006

Appl. No.:

11/618368

Inventors:

Aaron O. Vanderpool - Queen Creek AZ, US
Mitchell C. Taylor - Lake Oswego OR, US

International Classification:

H01L 21/8232
H01L 21/335

US Classification:

438142

Abstract:

A method including implanting carbon and fluorine into a substrate in an area of the substrate between a source/drain region and a channel, the area designated for a source/drain extension; and a source/drain extension dopant following implanting carbon and fluorine, implanting phosphorous in the area. A method including disrupting a crystal lattice of a semiconductor substrate in an area of the substrate between a source/drain region and a channel designated for a source/drain extension; after disrupting, implanting carbon and fluorine in the area; and implanting phosphorous in the area. A method including performing a boron halo implant before implanting phosphorous to form N-type source/drain extensions. An apparatus including an N-type transistor having a source/drain extension comprising carbon and phosphorous, formed in an area of a substrate between a source/drain region of the transistor and a channel of the transistor.