Mohammed R Islam

US Patent:

20220283387, Sep 8, 2022

Filed:

Mar 3, 2021

Appl. No.:

17/191477

Inventors:

- Hsin-Chu, TW
Wei-wei Song - Sunnyvale CA, US
Mohammed Rabiul Islam - Austin TX, US

International Classification:

G02B 6/42
H01L 25/18
H01L 25/065
H01L 23/367
H01L 25/00

Abstract:

Heterogeneous packaging integration of photonic and electronic elements is described herein. In one embodiment, a disclosed package includes: a package substrate; a first layer comprising an electronic die on the package substrate; and a second layer comprising a photonic die. The second layer is bonded onto the first layer such that the photonic die is bonded onto the electronic die.

US Patent:

20230114059, Apr 13, 2023

Filed:

Dec 13, 2022

Appl. No.:

18/080684

Inventors:

- Hsinchu, TW
Stefan RUSU - Sunnyvale CA, US
Mohammed Rabiul ISLAM - Austin TX, US

International Classification:

G02B 6/132
G02B 6/136
H04B 10/25

Abstract:

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

US Patent:

20170194521, Jul 6, 2017

Filed:

Mar 21, 2017

Appl. No.:

15/465458

Inventors:

- Milpitas CA, US
Heather Deshazer - Palo Alto CA, US
Mohammed Islam - Mountain House CA, US
Mehrdad M. Moslehi - Los Altos CA, US

International Classification:

H01L 31/0224
H01L 31/0216

Abstract:

Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. A passivating dielectric insulating layer is on the base and emitter regions. A first electrically conductive contact contacts the passivating dielectric insulating layer together having a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer. A second electrically conductive contact contacts the passivating dielectric insulating layer together having a work function suitable for selective collection of electrons that closely matches a valence band of the light absorbing layer.

US Patent:

20170076012, Mar 16, 2017

Filed:

Apr 12, 2016

Appl. No.:

15/097102

Inventors:

- San Francisco CA, US
Adam Torman - Walnut Creek CA, US
Mohammed Salman Islam - Lancaster CA, US

International Classification:

G06F 17/30

Abstract:

Disclosed are some examples of database systems, methods, and computer program products for processing log files. In some implementations, log files can be accessed and identifiers can be generated for the data entries of the log files. The generated identifiers can be used to determine whether data entries in the log files are new, and therefore, should be extracted for analysis.

US Patent:

20160108793, Apr 21, 2016

Filed:

Oct 17, 2014

Appl. No.:

14/517378

Inventors:

- Peoria IL, US
Rajesh Kandibanda - Gilroy CA, US
Mohammed Ohidul Islam - Champaign IL, US
Krishna N. Pai - Decatur IL, US
Siddartha Veliganti Reddy - Chambersburg PA, US

Assignee:

CATERPILLAR INC. - Peoria IL

International Classification:

F01N 13/14
F01N 3/021
F01N 3/20

Abstract:

A housing for an exhaust fluid pump electronics and tank unit may include a chamber and a deflection flange. The housing may include a removable cover including a vent and a cover flange. The cover flange may be removably coupled to the deflection flange. A duct may be disposed on the housing and capable of fluidly communicating the chamber to a negative pressure source.

US Patent:

20160049540, Feb 18, 2016

Filed:

Aug 13, 2015

Appl. No.:

14/826171

Inventors:

- Milpitas CA, US
Heather Deshazer - Palo Alto CA, US
Mohammed Islam - Mountain House CA, US

International Classification:

H01L 31/068
H01L 31/036
H01L 31/0224
H01L 31/028
H01L 31/0216

Abstract:

A photovoltaic solar cell comprises a light absorbing layer of n-type crystalline silicon. An emitter layer is on the front side of the n-type crystalline silicon. A front passivation layer physically contacts the emitter layer. A front metal contact is on the front passivation layer and contacts the emitter layer. A back layer of wide bandgap semiconductor physically contacts a back side of the n-type crystalline silicon layer. A back metal contact physically contacts the wide bandgap semiconductor layer.

US Patent:

20150236174, Aug 20, 2015

Filed:

Dec 18, 2014

Appl. No.:

14/576161

Inventors:

- Milpitas CA, US
Heather Deshazer - Palo Alto CA, US
Mohammed Islam - Mountain House CA, US
Mehrdad M. Moslehi - Los Altos CA, US

International Classification:

H01L 31/0224
H01L 31/0216

Abstract:

Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. A passivating dielectric insulating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and passivating dielectric insulating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.

US Patent:

20150236175, Aug 20, 2015

Filed:

Dec 23, 2014

Appl. No.:

14/582090

Inventors:

- Milpitas CA, US
Heather Deshazer - Palo Alto CA, US
Mohammed Islam - Mountain House CA, US
Mehrdad M. Moslehi - Los Altos CA, US

International Classification:

H01L 31/0224
H01L 31/02
H01L 31/0216

Abstract:

Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. An amorphous silicon passivating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and the amorphous silicon passivating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.