Muhammad Mashiur Rahman

US Patent:

20170358617, Dec 14, 2017

Filed:

Oct 14, 2016

Appl. No.:

15/294191

Inventors:

- Phoenix AZ, US
Muhammad Maksudur RAHMAN - San Jose CA, US
Eric Gordon STEVENS - Webster NY, US
Bartosz Piotr BANACHOWICZ - San Jose CA, US
Robert Michael GUIDASH - Rochester NY, US
Vladimir KOROBOV - San Mateo CA, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 27/146
H01L 29/10
H04N 5/361
H04N 5/378

Abstract:

An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.