Muhammad M Rahman

US Patent:

20210014438, Jan 14, 2021

Filed:

Oct 23, 2019

Appl. No.:

16/661009

Inventors:

- Phoenix AZ, US
Sergey VELICHKO - Boise ID, US
Bartosz Piotr BANACHOWICZ - San Jose CA, US
Tomas GEURTS - Haasrode, BE
Muhammad Maksudur RAHMAN - Santa Clara CA, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H04N 5/355
H01L 27/146

Abstract:

An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

US Patent:

20170358617, Dec 14, 2017

Filed:

Oct 14, 2016

Appl. No.:

15/294191

Inventors:

- Phoenix AZ, US
Muhammad Maksudur RAHMAN - San Jose CA, US
Eric Gordon STEVENS - Webster NY, US
Bartosz Piotr BANACHOWICZ - San Jose CA, US
Robert Michael GUIDASH - Rochester NY, US
Vladimir KOROBOV - San Mateo CA, US

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

International Classification:

H01L 27/146
H01L 29/10
H04N 5/361
H04N 5/378

Abstract:

An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.

US Patent:

20170294522, Oct 12, 2017

Filed:

Apr 6, 2016

Appl. No.:

15/092168

Inventors:

- Grand Cayman, KY
Muhammad Rahman - Clifton Park NY, US
Srikanth Balaji Samavedam - Cohoes NY, US

International Classification:

H01L 29/66
H01L 29/78
H01L 29/08
H01L 21/265
H01L 21/306

Abstract:

One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, forming a gate structure around the fin and, after forming the gate structure, forming a final source/drain cavity in the fin, wherein the source/drain cavity comprises an upper innermost edge and a lower innermost edge, both of which extend laterally under at least a portion of the gate structure, and wherein the lower innermost edge extends laterally further under the gate structure than does the upper innermost edge. The method also includes performing an epitaxial growth process to form an epi semiconductor material in the final source/drain cavity