Muhammad M Rasheed

US Patent:

7141138, Nov 28, 2006

Filed:

Jul 28, 2003

Appl. No.:

10/630989

Inventors:

Sudhir Gondhalekar - Fremont CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Tom K. Cho - Palo Alto CA, US
Muhammad Rasheed - Fremont CA, US
Hemant Mungekar - San Jose CA, US
Thanh N. Pham - San Jose CA, US
Zhong Qiang Hua - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/306
C23C 16/00
C23F 1/00

US Classification:

15634533, 118715

Abstract:

The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

US Patent:

7183227, Feb 27, 2007

Filed:

Jul 1, 2004

Appl. No.:

10/884628

Inventors:

Muhammad M. Rasheed - Fremont CA, US
Steven H Kim - Union City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31
H01L 21/469
H01L 21/4763
H01L 21/311

US Classification:

438778, 438758, 438629, 438694

Abstract:

High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.

US Patent:

7498268, Mar 3, 2009

Filed:

Oct 23, 2006

Appl. No.:

11/552129

Inventors:

Sudhir Gondhalekar - Fremont CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Tom K. Cho - Palo Alto CA, US
Muhammad Rasheed - Fremont CA, US
Hemant Mungekar - San Jose CA, US
Thanh N. Pham - San Jose CA, US
Zhong Qiang Hua - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/461
H01L 21/302

US Classification:

438712, 438710, 257E51044

Abstract:

The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

US Patent:

7572647, Aug 11, 2009

Filed:

Feb 2, 2007

Appl. No.:

11/670728

Inventors:

Robert Chen - Fremont CA, US
Canfeng Lai - Fremont CA, US
Xinglong Chen - San Jose CA, US
Weiyi Luo - Fremont CA, US
Zhong Qiang Hua - Saratoga CA, US
Siqing Lu - San Jose CA, US
Muhammad Rasheed - Fremont CA, US
Qiwei Liang - Fremont CA, US
Dmitry Lubomirsky - Cupertino CA, US
Ellie Y. Yieh - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438 5, 438788, 257E21528, 257E21478, 427 9, 42725523

Abstract:

A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

US Patent:

7722737, May 25, 2010

Filed:

May 4, 2005

Appl. No.:

11/123453

Inventors:

Sudhir Gondhalekar - Fremont CA, US
Robert Duncan - San Jose CA, US
Siamak Salimian - Sunnyvale CA, US
Muhammad M. Rasheed - Fremont CA, US
Harry Smith Whitesell - San Jose CA, US
Bruno Geoffrion - San Jose CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Rudolf Gujer - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/326
C23C 16/505

US Classification:

15634533, 15634534, 118715

Abstract:

Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

US Patent:

7789993, Sep 7, 2010

Filed:

Feb 2, 2007

Appl. No.:

11/670662

Inventors:

Robert Chen - Fremont CA, US
Canfeng Lai - Fremont CA, US
Xinglong Chen - San Jose CA, US
Weiyi Luo - Fremont CA, US
Zhong Qiang Hua - Saratoga CA, US
Siqing Lu - San Jose CA, US
Muhammad Rasheed - Fremont CA, US
Qiwei Liang - Fremont CA, US
Dmitry Lubomirsky - Cupertino CA, US
Ellie Y. Yieh - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
H01L 21/306

US Classification:

15634548, 118723 I, 118723 AN, 31511151

Abstract:

A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

US Patent:

7811411, Oct 12, 2010

Filed:

Aug 9, 2005

Appl. No.:

11/200431

Inventors:

Siqing Lu - San Jose CA, US
Qiwei Liang - Fremont CA, US
Irene Chou - San Jose CA, US
Steven H. Kim - Union City CA, US
Young S. Lee - San Jose CA, US
Ellie Y. Yieh - San Jose CA, US
Muhammad M. Rasheed - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
H01L 21/306

US Classification:

15634548, 118723 I, 118723 AN

Abstract:

An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4. 0 W/mK or greater.

US Patent:

7964040, Jun 21, 2011

Filed:

Nov 5, 2008

Appl. No.:

12/265641

Inventors:

Muhammad M. Rasheed - Fremont CA, US
Dmitry Lubomirsky - Cupertino CA, US
James Santosa - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 5/00

US Classification:

134 21, 134 1, 134 11, 134 18, 134 221, 134 2211, 134 26, 134 30, 134 31, 134 37, 134 42, 134 961, 134 981, 134186, 134902

Abstract:

An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.