Murlidhar V Kulkarni

US Patent:

55447759, Aug 13, 1996

Filed:

Dec 22, 1994

Appl. No.:

8/363159

Inventors:

Randall T. Kerth - San Jose CA
Douglas J. Krajnovich - San Jose CA
Murlidhar V. Kulkarni - San Jose CA
Wing P. Leung - Arcadia CA
Andrew C. Tam - Saratoga CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B23C 300

US Classification:

216 65

Abstract:

A method is provided for making a high definition, high aspect ratio amorphous carbon element, such as a slider, which carries one or more magnetic heads in a disk drive. A special gaseous environment is provided during laser etching which results in virtually no redeposition of the etched material. The result is a carbon element which has good edge definition for establishing desirable flying characteristics of a slider. In a preferred embodiment the laser etching, which is preferably implemented by an excimer laser, is performed in an gaseous environment of oxygen saturated with water vapor at a pressure above ambient. Significant improvements were also realized with nitrogen saturated with water vapor at a pressure above ambient and steam at ambient pressure. High aspect ratios were achieved, namely slope angles of 50. degree. to 60. degree.

US Patent:

44328095, Feb 21, 1984

Filed:

Mar 10, 1982

Appl. No.:

6/364542

Inventors:

Patrick W. Chye - Mountain View CA
Eric W. Hearn - Wappingers Falls NY
Murlidhar V. Kulkarni - Fishkill NY
Gary Markovits - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21322
H01L 21324

US Classification:

148 15

Abstract:

The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.