Myung Ho Kim

US Patent:

20200052108, Feb 13, 2020

Filed:

Oct 21, 2019

Appl. No.:

16/659264

Inventors:

Myung Ok Kim - Chandler AZ, US
Kuhwan Kim - Chandler AZ, US

International Classification:

H01L 29/78
H01L 29/786

Abstract:

A semiconductor device includes a semiconductor substrate having isolation regions formed therein and a fin-shaped semiconductor structure protruding vertically above the isolation regions and extending laterally in a first direction. The device additionally includes a gate dielectric wrapping a channel region of the fin-shaped semiconductor structure and a gate electrode wrapping the gate dielectric. The channel region is interposed in the first direction between a source region and a drain region and has sloped sidewalls and a width that continuously decreases from a base towards a peak of the channel region. The channel region comprises a volume inversion region having a height greater than about 25% of a total height of the channel region.