Nan Chen

US Patent:

20220238460, Jul 28, 2022

Filed:

Oct 5, 2021

Appl. No.:

17/494747

Inventors:

- San Diego CA, US
Zhengming FU - Austin TX, US
Nan CHEN - San Diego CA, US
Adam POLAK - San Diego CA, US
Laura FUENTES - San Diego CA, US
Gregory BULLARD - La Mesa CA, US
Mark TODOROVICH - San Diego CA, US

International Classification:

H01L 23/00
H01L 27/144
G06F 21/75

Abstract:

Various embodiments include integrated approaches to detecting attempts to breach system-level or chip-level security using photo-generated currents induced by lasers or other radiation sources. Various embodiments integrate photo-detection circuits with a secure processor or other circuit in such a manner that the response to a security attack is fast enough to prevent loss of secure or private information are described. Various embodiments include circuits capable of providing a permanent record of photocurrent detection.

US Patent:

20200303325, Sep 24, 2020

Filed:

Mar 20, 2019

Appl. No.:

16/359319

Inventors:

- San Diego CA, US
Zhengming FU - Austin TX, US
Nan CHEN - San Diego CA, US
Adam POLAK - San Diego CA, US
Laura FUENTES - San Diego CA, US
Gregory BULLARD - La Mesa CA, US
Mark TODOROVICH - San Diego CA, US

International Classification:

H01L 23/00
G06F 21/75
H01L 27/144

Abstract:

Various embodiments include integrated approaches to detecting attempts to breach system-level or chip-level security using photo-generated currents induced by lasers or other radiation sources. Various embodiments integrate photo-detection circuits with a secure processor or other circuit in such a manner that the response to a security attack is fast enough to prevent loss of secure or private information are described. Various embodiments include circuits capable of providing a permanent record of photocurrent detection.

US Patent:

20190371989, Dec 5, 2019

Filed:

Nov 6, 2017

Appl. No.:

16/348146

Inventors:

- San Jose CA, US
Jürgen MERTENS - Wuerselen, DE
Sze Kuang LEE - Bayan Lepas, MY
Nan CHEN - Winchester MA, US

Assignee:

Lumileds LLC - San Jose CA

International Classification:

H01L 33/62
H01L 21/48
H01L 23/495
H01L 33/64

Abstract:

A method of manufacturing a lead frame, includes preparing a stamping arrangement to stamp a lead frame comprising a plurality of electrode contact regions, wherein complementary contact regions are separated by an initial gap width; and a number of connecting bars, wherein a connecting bar extends between regions of the lead frame; using the stamping arrangement to stamp the lead frame; and deforming at least one connecting bar of the stamped lead frame to reduce the gap width between complementary contact regions to a final gap width. Further described is a lead frame comprising a plurality of LED electrode contact regions, with a gap width of at most 250 μm between complementary contact regions after the deformation step. The invention further describes an LED lighting device comprising such a lead frame and at least one LED die package mounted onto complementary electrode contact regions of the lead frame.