Nasreen G Chopra

US Patent:

6448187, Sep 10, 2002

Filed:

Feb 21, 2001

Appl. No.:

09/792122

Inventors:

David Cheung - Foster city CA
Nasreen Gazala Chopra - Menlo Park CA
Yung-Cheng Lu - San Jose CA
Robert Mandal - Saratoga CA
Farhad Moghadam - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438758, 438780, 438781, 438789, 438790, 427579, 427489, 427503

Abstract:

A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

US Patent:

6511922, Jan 28, 2003

Filed:

Mar 26, 2001

Appl. No.:

09/818359

Inventors:

Padmanabhan Krishnaraj - San Francisco CA
Robert Duncan - San Jose CA
Joseph DSouza - Sunnyvale CA
Alan W. Collins - San Francisco CA
Nasreen Chopra - Belmont CA
Kimberly Branshaw - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438778, 438790, 438780

Abstract:

Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF ), oxygen (O ), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

US Patent:

6632735, Oct 14, 2003

Filed:

Aug 7, 2001

Appl. No.:

09/924240

Inventors:

Nasreen Gazala Chopra - Belmont CA
David Cheung - Foster City CA
Farhad Moghadam - Saratoga CA
Kuo-Wei Liu - San Jose CA
Yung-Cheng Lu - Taipei, TW
Ralf B. Willecke - Santa Clara CA
Paul Matthews - San Jose CA
Dian Sugiarto - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438623, 438783, 438637, 438624, 438788, 438763, 438795, 438638, 438789, 438780

Abstract:

A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

US Patent:

6633076, Oct 14, 2003

Filed:

Oct 30, 2002

Appl. No.:

10/283996

Inventors:

Padmanabhan Krishnaraj - San Francisco CA
Robert Duncan - San Jose CA
Joseph DSouza - Sunnyvale CA
Alan W. Collins - San Francisco CA
Nasreen Chopra - Belmont CA
Kimberly Branshaw - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 3100

US Classification:

257641

Abstract:

Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF ), oxygen (O ), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

US Patent:

6743737, Jun 1, 2004

Filed:

Aug 22, 2002

Appl. No.:

10/226717

Inventors:

David Cheung - Foster City CA
Nasreen Gazala Chopra - Menlo Park CA
Yung-Cheng Lu - San Jose CA
Robert Mandal - Saratoga CA
Farhad Moghadam - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438758, 438780, 438781, 438789, 438790, 438579, 427489, 427503

Abstract:

A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

US Patent:

6870361, Mar 22, 2005

Filed:

Dec 21, 2002

Appl. No.:

10/328345

Inventors:

Nasreen G. Chopra - Belmont CA, US
David Paul Basile - Corvallis OR, US
Jene A. Golovchenko - Lexington MA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

G01N027/00
H01L023/58
H01L021/00

US Classification:

3241581, 257798, 438800, 977DIG 1

Abstract:

A nano-scale system is provided, and a method of manufacture therefor, including a support material, a nanotube embedded in the support material and an electrical connection to the nanotube.

US Patent:

6907103, Jun 14, 2005

Filed:

Jun 19, 2002

Appl. No.:

10/174737

Inventors:

S. Jeffrey Rosner - Palo Alto CA, US
Nasreen Gazala Chopra - Belmont CA, US
Ang Shih - San Jose CA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

G01N023/04

US Classification:

378 62, 378 57, 378 58

Abstract:

An imaging system that is capable of capturing images of moving objects as they are moving with minimal blurring by moving a point source of illumination such that the position from which illumination is projected is changed as the object moves to ensure that the position of the image projected onto an imaging plane remains substantially effectively stationary. The position from which illumination is projected functions as a point source of illumination. A image sensor of the imaging system is positioned in the imaging plane and receives illumination projected from the position of the illumination source that passes through the moving object. The image sensor produces electrical signals in response to the received illumination. Because the image of the moving object remains effectively stationary on the image sensor, which is located in the imaging plane, an image of at least a portion of the moving object can be constructed with minimal blurring and without having to halt the object to capture an image of it. Because it is not necessary to halt the object and allow the object to settle before capturing an image of it, the throughput of the imaging system is increased and the captured images are greatly improved.

US Patent:

6919002, Jul 19, 2005

Filed:

May 17, 2002

Appl. No.:

10/150672

Inventors:

Nasreen G. Chopra - Belmont CA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

G01N027/327
C23C008/00
B01D035/22

US Classification:

20440306, 427585, 210348

Abstract:

A nanopore system, and manufacturing method therefor, is provided with a substrate having a support material over the substrate. A nano-structure in the support material forms a nanopore.