Nicolas J Bright

US Patent:

6736720, May 18, 2004

Filed:

Dec 26, 2001

Appl. No.:

10/033455

Inventors:

Nicolas Bright - San Jose CA
David J. Hemker - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B24B 100

US Classification:

438 7, 457 5, 457 53, 457 41, 457288

Abstract:

Apparatus and methods control the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier has a wafer mounting surface for positioning the wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector is oriented adjacent to the wafer mounting surface for detecting the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.

US Patent:

6808590, Oct 26, 2004

Filed:

Jun 28, 2002

Appl. No.:

10/186932

Inventors:

Yehiel Gotkis - Fremont CA
Rodney Kistler - Los Gatos CA
Aleksander Owczarz - San Jose CA
David Hemker - San Jose CA
Nicolas J. Bright - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21302

US Classification:

15634516, 324 715

Abstract:

A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

US Patent:

6859765, Feb 22, 2005

Filed:

Dec 13, 2002

Appl. No.:

10/318967

Inventors:

Yehiel Gotkis - Fremont CA, US
Vladimir Katz - Fremont CA, US
David Hemker - San Jose CA, US
Rodney Kistler - Los Gatos CA, US
Nicolas J. Bright - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H04B015/00

US Classification:

702193, 382141

Abstract:

A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.

US Patent:

6894491, May 17, 2005

Filed:

Dec 23, 2002

Appl. No.:

10/328884

Inventors:

Yehiel Gotkis - Fremont CA, US
Rodney Kistler - Los Gatos CA, US
Aleksander Owczarz - San Jose CA, US
David Hemker - San Jose CA, US
Nicolas J. Bright - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01B007/06
G01R033/12

US Classification:

324230, 324233, 324243, 324225

Abstract:

A method for detecting a thickness of a layer of a wafer is provided. The method includes defining a particular radius of a wafer carrier configured to engage the wafer to be processed. The method also includes providing a plurality of sensors configured to create a set of complementary sensors. Further included in the method is distributing the plurality of sensors along the particular radius within the wafer carrier such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

US Patent:

6909190, Jun 21, 2005

Filed:

Feb 16, 2001

Appl. No.:

09/788105

Inventors:

Jay E. Uglow - Livermore CA, US
Nicolas J. Bright - San Jose CA, US
Dave J. Hemker - San Jose CA, US
Kenneth P. MacWilliams - Monte Sereno CA, US
Jeffrey C. Benzing - Saratoga CA, US
Timothy M. Archer - Portland OR, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L023/48

US Classification:

257759, 257758, 257774

Abstract:

A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.

US Patent:

6922053, Jul 26, 2005

Filed:

Aug 5, 2004

Appl. No.:

10/914017

Inventors:

Yehiel Gotkis - Fremont CA, US
Rodney Kistler - Los Gatos CA, US
Aleksander Owczarz - San Jose CA, US
David Hemker - San Jose CA, US
Nicolas J. Bright - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01B007/06
G01R033/12

US Classification:

324230, 324233, 324243, 324225

Abstract:

A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

US Patent:

6929531, Aug 16, 2005

Filed:

Sep 19, 2002

Appl. No.:

10/251033

Inventors:

Yehiel Gotkis - Fremont CA, US
Aleksander Owczarz - San Jose CA, US
David Hemker - San Jose CA, US
Nicolas Bright - San Jose CA, US
Rodney Kistler - Los Gatos CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B24B049/00

US Classification:

451 8, 451 5

Abstract:

A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.

US Patent:

6951624, Oct 4, 2005

Filed:

Jun 29, 2004

Appl. No.:

10/881094

Inventors:

Yehiel Gotkis - Fremont CA, US
Rodney Kistler - Los Gatos CA, US
Aleksander Owczarz - San Jose CA, US
David Hemker - San Jose CA, US
Nicolas J. Bright - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L021/302
G01R027/00

US Classification:

216 86, 216 88, 451 1, 15634513

Abstract:

A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.