Olga M Kryliouk

US Patent:

6350666, Feb 26, 2002

Filed:

Dec 12, 2000

Appl. No.:

09/735218

Inventors:

Olga Kryliouk - Gainesville FL

Assignee:

University of Florida - Gainesville FL

International Classification:

C30B 2502

US Classification:

438604, 438584, 438602, 438787, 117952, 257615, 257 94, 257 76, 257103

Abstract:

The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition Al In Ga N (where 0x1, 0y1, and 0x+y1). In a specific embodiment, GaN substrates, with low dislocation densities (Ë10 cm ) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO , LiAlO , MgAlScO , Al MgO , and LiNdO. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both.

US Patent:

6906351, Jun 14, 2005

Filed:

Aug 5, 2003

Appl. No.:

10/634220

Inventors:

Olga Kryliouk - Gainesville FL, US
Timothy J. Anderson - Gainesville FL, US
Michael Anthony Mastro - Alexandria VA, US

Assignee:

University of Florida Research Foundation, Inc. - Gainesville FL

International Classification:

H01L029/22

US Classification:

257 78, 438604

Abstract:

A layered article and method for forming the same includes a single crystal silicon substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate, and a single crystal GaN layer disposed on the oxynitride layer. The silicon oxynitride layer can be formed by nitridation of a native oxide layer. One or more integrated electronic circuits and/or integrated optical or optoelectronic devices can be built on the article.

US Patent:

6967355, Nov 22, 2005

Filed:

Oct 22, 2003

Appl. No.:

10/691055

Inventors:

Olga Kryliouk - Gainesville FL, US
Tim Anderson - Gainesville FL, US
Omar J. Bchir - Gainesville FL, US
Kee Chan Kim - Gainesville FL, US

Assignee:

University of Florida Research Foundation, Inc. - Gainesville FL

International Classification:

H01L033/00

US Classification:

257103, 257190, 438 46

Abstract:

A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.

US Patent:

7001791, Feb 21, 2006

Filed:

Oct 22, 2003

Appl. No.:

10/691353

Inventors:

Olga Kryliouk - Gainesville FL, US
Tim Anderson - Gainesville FL, US
Kee Chan Kim - Gainesville FL, US

Assignee:

University of Florida - Gainesville FL

International Classification:

H01L 21/00

US Classification:

438 46, 438 93, 438104

Abstract:

A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600 C.

US Patent:

8080466, Dec 20, 2011

Filed:

Aug 10, 2010

Appl. No.:

12/853409

Inventors:

Jie Su - Santa Clara CA, US
Olga Kryliouk - Sunnyvale CA, US
Yuriy Melnik - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/36

US Classification:

438478, 438680, 438698, 438778, 438E2109

Abstract:

Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.

US Patent:

8110889, Feb 7, 2012

Filed:

Mar 24, 2010

Appl. No.:

12/730975

Inventors:

Olga Kryliouk - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/20
H01L 21/36

US Classification:

257493, 257E21085, 257E21097, 257E21108, 257E21117, 438478, 438492

Abstract:

In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a gallium nitride layer over the substrate with a thermal chemical-vapor-deposition process within the MOCVD chamber by flowing a first gallium containing precursor and a first nitrogen containing precursor through the showerhead into the MOCVD chamber, removing the one or more substrates from the MOCVD chamber without exposing the one or more substrates to atmosphere, flowing a chlorine gas into the processing chamber to remove contaminants from the showerhead, transferring the one or more substrates into the MOCVD chamber after removing contaminants from the showerhead, and depositing an InGaN layer over the GaN layer with a thermal chemical-vapor-deposition process within the MOCVD chamber is provided.

US Patent:

8138069, Mar 20, 2012

Filed:

Apr 23, 2010

Appl. No.:

12/766779

Inventors:

Yuriy Melnik - Santa Clara CA, US
Olga Kryliouk - Sunnyvale CA, US
Hidehiro Kojiri - Sunnyvale CA, US
Tetsuya Ishikawa - Saratoga CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/20

US Classification:

438479, 257E21121

Abstract:

Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH) and a halogen gas.

US Patent:

8148241, Apr 3, 2012

Filed:

Jul 23, 2010

Appl. No.:

12/842896

Inventors:

Jie Su - Santa Clara CA, US
Olga Kryliouk - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/36

US Classification:

438478, 438483, 438486, 438572, 438779, 257E21398, 257E2109, 257E21097, 257E21108, 257E21117, 257E21118, 257E21125, 257E21126, 257E21138, 257E21173

Abstract:

One embodiment of depositing a gallium nitride (GaN) film on a substrate comprises providing a source of indium (In) and gallium (Ga) and depositing a monolayer of indium (In) on the surface of the gallium nitride (GaN) film. The monolayer of indium (In) acts as a surfactant to modify the surface energy and facilitate the epitaxial growth of the film by suppressing three dimensional growth and enhancing or facilitating two dimensional growth. The deposition temperature is kept sufficiently high to enable the indium (In) to undergo absorption and desorption on the gallium nitride (GaN) film without being incorporated into the solid phase gallium nitride (GaN) film. The gallium (Ga) and indium (In) can be provided by a single source or separate sources.