Osama F Tobail

US Patent:

20120156393, Jun 21, 2012

Filed:

Dec 17, 2010

Appl. No.:

12/971243

Inventors:

Osama Tobail - Elmsford NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Mostafa M. El-Ashry - Elmsford NY, US
Jeehwan Kim - Los Angeles CA, US
Paul M. Kozlowski - Poughkeepsie NY, US
Mohamed Saad - New York NY, US
Devendra K. Sadana - Pleasantville NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

C23C 16/50
C23C 16/42
C23C 16/00

US Classification:

427578, 118723 E, 427569

Abstract:

A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.

US Patent:

20130130077, May 23, 2013

Filed:

Nov 22, 2011

Appl. No.:

13/302576

Inventors:

MOSTAFA M. EL-ASHRY - Elmsford NY, US
Osama Tobail - Elmsford NY, US
George S. Tulevski - White Plains NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01M 4/00
B05D 5/00
H01M 4/70
H01M 4/40
B82Y 30/00

US Classification:

429 66, 427 77, 216 17, 427 78, 977742

Abstract:

An electrode includes a conductive substrate and a plurality of conductive structures providing a compressible matrix of material. An active material is formed in contact with the plurality of conductive structures. The active material includes a volumetrically expanding material which expands during ion diffusion such that the plurality of conductive structures provides support for the active material and compensates for volumetric expansion of the active material to prevent damage to the active material.

US Patent:

20120031477, Feb 9, 2012

Filed:

Aug 4, 2010

Appl. No.:

12/850272

Inventors:

Keith E. Fogel - Hopewell Junction NY, US
Jee H. Kim - Los Angeles CA, US
Devendra K. Sadana - Pleasantville NY, US
George S. Tulevski - White Plains NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Hisham S. Mohamed - Clifton Park NY, US
Mohamed Saad - White Plains NY, US
Osama Tobail - Elmsford NY, US

Assignee:

EGYPT NANOTECHNOLOGY CENTER - Cairo-Alexandria
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 31/108
H01L 31/18

US Classification:

136255, 438 92, 977750, 977734, 257E31065

Abstract:

A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

US Patent:

20160343899, Nov 24, 2016

Filed:

Aug 5, 2016

Appl. No.:

15/229604

Inventors:

- Armonk NY, US
- Cairo-Alexandria, EG
Devendra K. Sadana - Pleasantville NY, US
George S. Tulevski - White Plains NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Hisham S. Mohamed - Clifton Park NY, US
Mohamed Saad - White Plains NY, US
Osama Tobail - Elmsford NY, US

International Classification:

H01L 31/18
H01L 31/20

Abstract:

A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

US Patent:

20160260859, Sep 8, 2016

Filed:

May 17, 2016

Appl. No.:

15/156940

Inventors:

- Armonk NY, US
- Cairo-Alexandria, EG
Devendra K. Sadana - Pleasantville NY, US
George S. Tulevski - White Plains NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Hisham S. Mohamed - Clifton Park NY, US
Mohamed Saad - White Plains NY, US
Osama Tobail - Elmsford NY, US

International Classification:

H01L 31/07
H01L 31/028
H01L 31/056
H01L 31/0224

Abstract:

A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

US Patent:

20140196780, Jul 17, 2014

Filed:

Mar 18, 2014

Appl. No.:

14/218410

Inventors:

- Cairo-Alexandria, EG
- Armonk NY, US
Devendra K. Sadana - Pleasantville NY, US
George S. Tulevski - White Plains NY, US
Ahmed Abou-Kandil - Elmsford NY, US
Hisham S. Mohamed - Clifton Park NY, US
Mohamed Saad - White Plains NY, US
Osama Tobail - Elmsford NY, US

Assignee:

EGYPT NANOTECHNOLOGY CENTER - Cairo-Alexandria
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 31/07
H01L 31/075
H01L 31/0232
H01L 31/18

US Classification:

136255, 438 98, 438 87, 438 72

Abstract:

A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.